Phosphine

Phosphine

SCHEMBL722469

B.P.[Co].[W]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphine SCHEMBL27626535 1.00
Phosphine SCHEMBL5014348 0.89
Phosphine SCHEMBL27702401 0.89
Phosphine SCHEMBL3264086 0.87
SCHEMBL1343557 0.87
Phosphine SCHEMBL306494 0.87
Phosphine SCHEMBL8941779 0.75
SCHEMBL8836643 0.75
Phosphine SCHEMBL7539199 0.75
SCHEMBL4072519 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024156770-A1 PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER Atotech Deutschland GmbH & Co. KG (DE) 2024-08-02 WO claimed
EP-4407067-A1 PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER Atotech Deutschland GmbH & Co. KG (DE) 2024-07-31 EP claimed
US-20200232099-A1 PLATING BATH COMPOSITION FOR ELECTROLESS PLATING OF GOLD AND A METHOD FOR DEPOSITING A GOLD LAYER ATOTECH DEUTSCHLAND GMBH & CO. KG (F/K/A ATOTECH DEUTSCHLAND GMBH) (DE) 2020-07-23 US claimed
CN-105702630-B Semiconductor structure and forming method thereof 中芯国际集成电路制造(上海)有限公司 2020-07-10 CN claimed
EP-3144413-B1 PLATING BATH COMPOSITION FOR ELECTROLESS PLATING OF GOLD ATOTECH DEUTSCHLAND GMBH (DE) 2018-04-25 EP claimed
EP-3144413-A1 PLATING BATH COMPOSITION FOR ELECTROLESS PLATING OF GOLD ATOTECH Deutschland GmbH (DE) 2017-03-22 EP claimed
US-9406556-B2 Method of making an interconnect device LAM RESEARCH CORPORATION (US) 2016-08-02 US claimed
CN-105702630-A Semiconductor structure and formation method thereof 中芯国际集成电路制造(上海)有限公司 2016-06-22 CN claimed
CN-102471918-B Electroless deposition solutions and process control LAM RES CORP 2015-05-27 CN claimed
US-20140099789-A1 METHOD OF MAKING AN INTERCONNECT DEVICE LAM RESEARCH CORPORATION (US) 2014-04-10 US claimed
US-20130078808-A1 ELECTROLESS DEPOSITION SOLUTIONS AND PROCESS CONTROL KOLICS ARTUR (US) 2013-03-28 US claimed
US-8328919-B2 Electroless deposition solutions and process control LAM RESEARCH CORPORATION (US) 2012-12-11 US claimed
EP-2454397-A1 ELECTROLESS DEPOSITION SOLUTIONS AND PROCESS CONTROL LAM Research Corporation (US) 2012-05-23 EP claimed
CN-102471918-A Electroless deposition solutions and process control LAM RES CORP 2012-05-23 CN claimed
US-20110014361-A1 ELECTROLESS DEPOSITION SOLUTIONS AND PROCESS CONTROL LAM RESEARCH CORPORATION 2011-01-20 US claimed
WO-2011008212-A1 ELECTROLESS DEPOSITION SOLUTIONS AND PROCESS CONTROL LAM RESEARCH CORPORATION (US) 2011-01-20 WO claimed
US-7741228-B2 Method for fabricating semiconductor device PANASONIC CORPORATION (JP) 2010-06-22 US claimed
US-20080299763-A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2008-12-04 US claimed
US-12396184-B2 Semiconductor devices including resistor structures SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-08-19 US disclosed
US-20050101130-A1 Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects APPLIED MATERIALS, INC. 2005-05-12 US disclosed