SCHEMBL3079835

SCHEMBL3079835

[Al].[Mo].[SiH4].[Ti]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30819882 0.89
SCHEMBL31112073 0.87
SCHEMBL3458255 0.87
SCHEMBL337583 0.87
SCHEMBL10783125 0.87
SCHEMBL31531475 0.87
SCHEMBL2678306 0.87
SCHEMBL3458251 0.87
SCHEMBL3821180 0.87
SCHEMBL5698023 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109321788-A A kind of acieral, the big alloy of aluminium base and preparation method thereof 王晓军 2019-02-12 CN disclosed
CN-102851541-B TiC particle-reinforced titanium-aluminum-molybdenum-silicon alloy material synthesized in situ and preparation method thereof UNIV NANJING AERONAUTICS 2014-06-18 CN disclosed
CN-102851541-B TiC particle-reinforced titanium-aluminum-molybdenum-silicon alloy material synthesized in situ and preparation method thereof UNIV NANJING AERONAUTICS 2014-06-18 CN disclosed
US-8350293-B2 Field effect transistor and method of manufacturing the same FURUKAWA ELECTRIC CO., LTD. (JP) 2013-01-08 US disclosed
CN-102851541-A TiC particle-reinforced titanium-aluminum-molybdenum-silicon alloy material synthesized in situ and preparation method thereof SUZHOU DONGHAI GLASS MOULD CO LTD 2013-01-02 CN disclosed
CN-102851541-A TiC particle-reinforced titanium-aluminum-molybdenum-silicon alloy material synthesized in situ and preparation method thereof SUZHOU DONGHAI GLASS MOULD CO LTD 2013-01-02 CN disclosed
US-20100219451-A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME FURUKAWA ELECTRIC CO., LTD. (JP) 2010-09-02 US disclosed