⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31531475 | 1.00 | — | — | |
| SCHEMBL31112073 | 1.00 | — | — | |
| Magnesium SCHEMBL31655461 | 0.87 | — | — | |
| SCHEMBL5698023 | 0.87 | — | — | |
| SCHEMBL31138061 | 0.87 | — | — | |
| SCHEMBL31512199 | 0.87 | — | — | |
| SCHEMBL9841226 | 0.87 | — | — | |
| SCHEMBL3079835 | 0.87 | — | — | |
| SCHEMBL9054000 | 0.87 | — | — | |
| SCHEMBL31619634 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 942 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117399637-B | High-performance in-situ autogenous Ti5Si3Near-net forming method of phase reinforced titanium-aluminum-based composite material | 南京理工大学 | 2026-05-12 | — | — | CN | claimed |
| US-20250309102-A1 | METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE PREPARED BY USING THE SAME | Innolux Corporation (TW) | 2025-10-02 | — | — | US | claimed |
| CN-119876872-A | Magnetron sputtering device improved cathode target external notch anode cover based on conventional column target discharge and use method | 哈尔滨工业大学 | 2025-04-25 | — | — | CN | claimed |
| CN-119800279-A | Device for rapidly and uniformly depositing thin film on inner wall of slender tube part by pre-ionized hollow cathode tube internal discharge and use method | 哈尔滨工业大学 | 2025-04-11 | — | — | CN | claimed |
| CN-119776786-A | Device for rapidly and uniformly depositing thin film on inner wall of slender pipe barrel by self-sputtering of hollow cathode and application method | 哈尔滨工业大学 | 2025-04-08 | — | — | CN | claimed |
| CN-119776764-A | Device for rapidly and uniformly depositing thin film on inner wall of hollow cathode slender pipe barrel based on water cooling and magnetic constraint and use method | 哈尔滨工业大学 | 2025-04-08 | — | — | CN | claimed |
| CN-119680526-A | Claus tail gas hydrogenation catalyst and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-03-25 | — | — | CN | claimed |
| CN-119614934-A | Aluminum-silicon alloy flux purifying and titanium removing process | 内蒙古蒙泰集团有限公司 | 2025-03-14 | — | — | CN | claimed |
| US-20250081593-A1 | METHODS OF IMPROVING PMOS TRANSISTOR PERFORMANCE | Applied Materials ,Inc (US) | 2025-03-06 | — | — | US | claimed |
| WO-2025049509-A1 | METHODS OF IMPROVING PMOS TRANSISTOR PERFORMANCE | APPLIED MATERIALS, INC. (US) | 2025-03-06 | — | — | WO | claimed |
| EP-0950702-A2 | Hydrocracking catalyst and hydrocracking method for hydrocarbon oils | Nippon Mitsubishi Oil Corporation (JP) | 1999-10-20 | — | — | EP | claimed |
| EP-0420589-B1 | Process for forming deposited film and process for preparing semiconductor device | CANON KK (JP) | 1996-02-07 | — | — | EP | claimed |
| US-4980752-A | Increased reliability by preventing passivation cracking and short circuiting | INMOS CORPORATION (US) | 1990-12-25 | — | — | US | claimed |
| US-4912543-A | Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy | SIEMENS AKTIENGESELLSCHAFT (DE) | 1990-03-27 | — | — | US | claimed |
| US-4896204-A | MULTILAYER FILM FOR INTERCONNECTION, ALUMINUM, ALUMINUM ALLOY, ALUMINUM OXIDE | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1990-01-23 | — | — | US | claimed |
| US-4826785-A | INTEGRATED CIRCUITS | INMOS CORPORATION (US) | 1989-05-02 | — | — | US | claimed |
| EP-0273629-A2 | Transition metal clad interconnect for integrated circuits | INMOS CORPORATION (US) | 1988-07-06 | — | — | EP | claimed |
| EP-0132720-B1 | INTEGRATED SEMICONDUCTOR CIRCUIT HAVING AN EXTERNAL ALUMINIUM OR ALUMINIUM ALLOY CONTACT INTERCONNECTION LAYER | SIEMENS AKTIENGESELLSCHAFT (DE) | 1988-01-07 | — | — | EP | claimed |
| US-4673623-A | REDUCING HILLOCK DENSITIES AND RESISTANCE | THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY (US) | 1987-06-16 | — | — | US | claimed |
| US-4527184-A | Integrated semiconductor circuits with contact interconnect levels comprised of an aluminum/silicon alloy | SIEMENS AKTIENGESELLSCHAFT (DE) | 1985-07-02 | — | — | US | claimed |