⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL21955713 | 1.00 | — | — | |
| Fluoride SCHEMBL6753953 | 1.00 | — | — | |
| Fluoride SCHEMBL6753956 | 1.00 | — | — | |
| Fluoride SCHEMBL3084625 | 1.00 | — | — | |
| SCHEMBL539 | 0.82 | — | — | |
| SCHEMBL23040651 | 0.67 | — | — | |
| Helium SCHEMBL7035046 | 0.67 | — | — | |
| Ammonia Solution, Strong SCHEMBL6866047 | 0.67 | — | — | |
| SCHEMBL1396185 | 0.67 | — | — | |
| SCHEMBL7367290 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2097909-A2 | GASEOUS DIELECTRICS WITH LOW GLOBAL WARMING POTENTIALS | Honeywell International Inc. (US) | 2009-09-09 | — | — | EP | claimed |
| WO-2008073790-A2 | GASEOUS DIELECTRICS WITH LOW GLOBAL WARMING POTENTIALS | HONEYWELL INTERNATIONAL INC. (US) | 2008-06-19 | — | — | WO | claimed |
| WO-2014074414-A1 | REDUCING GLITCHING IN AN ION IMPLANTER | VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (US) | 2014-05-15 | — | — | WO | disclosed |
| US-20140127394-A1 | Reducing Glitching In An Ion Implanter | VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. | 2014-05-08 | — | — | US | disclosed |
| US-8372489-B2 | Method for directional deposition using a gas cluster ion beam | TEL EPION INC. (US) | 2013-02-12 | — | — | US | disclosed |
| US-7794798-B2 | providing to a depressurized atmosphere a gas cluster ion beam (GCIB) from a pressurized gas mixture of silicon-containing gas and at least one of a N2-containing or a carbon-containing gases, accelerating the GCIB, irradiating the accelerated GCIB onto a surface to produce SiC, Si3n4, SiO2 or SiON | TEL EPION INC. (US) | 2010-09-14 | — | — | US | disclosed |
| WO-2009045740-A2 | METHOD FOR DEPOSITING FILMS USING GAS CLUSTER ION BEAM PROCESSING | TEL EPION INC. (US) | 2009-04-09 | — | — | WO | disclosed |
| WO-2009042484-A1 | METHOD FOR DIRECTIONAL DEPOSITION USING A GAS CLUSTER ION BEAM | TEL EPION INC. (US) | 2009-04-02 | — | — | WO | disclosed |
| US-20090087579-A1 | METHOD FOR DIRECTIONAL DEPOSITION USING A GAS CLUSTER ION BEAM | TEL EPION INC. (US) | 2009-04-02 | — | — | US | disclosed |
| US-20090087578-A1 | METHOD FOR DEPOSITING FILMS USING GAS CLUSTER ION BEAM PROCESSING | TEL EPION INC. (US) | 2009-04-02 | — | — | US | disclosed |