SCHEMBL310297

SCHEMBL310297

CO[Si](C)(C[Si](C)(OC)OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9404238 0.89
SCHEMBL5405139 0.85
SCHEMBL5425407 0.85
SCHEMBL331284 0.85
SCHEMBL5421282 0.82
SCHEMBL978795 0.82
SCHEMBL309171 0.82
SCHEMBL13089385 0.80
SCHEMBL12898521 0.80
SCHEMBL13089271 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 537 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122056125-A RF pulsed assisted low-K film deposition with high mechanical strength 应用材料公司 2026-05-15 CN claimed
US-20260117376-A1 METHOD AND SYSTEM FOR FORMING A SILICON-CONTAINING LAYER AND STRUCTURE FORMED USING SAME ASM IP HOLDING BV (NL) 2026-04-30 US claimed
US-20250304819-A1 Flexible and foldable abrasion resistant photopatternable siloxane hard coat OPTITUNE OY (FI) 2025-10-02 US claimed
WO-2025049147-A1 METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH APPLIED MATERIALS, INC. (US) 2025-03-06 WO claimed
US-20250069884-A1 METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH APPLIED MATERIALS, INC. (US) 2025-02-27 US claimed
US-20250054749-A1 RF PULSING ASSISTED LOW-K FILM DEPOSITION WITH HIGH MECHANICAL STRENGTH APPLIED MATERIALS, INC. (US) 2025-02-13 US claimed
WO-2025034650-A1 RF PULSING ASSISTED LOW-K DEPOSITION WITH HIGH MECHANICAL STRENGTH APPLIED MATERIALS, INC. (US) 2025-02-13 WO claimed
CN-119080473-B Preparation method of aerogel material for heat insulation oil pipe 山东美生热能科技有限公司 2025-02-11 CN claimed
CN-119080473-A Preparation method of aerogel material for heat insulation oil pipe 山东美生热能科技有限公司 2024-12-06 CN claimed
US-12125675-B2 RF pulsing assisted low-k film deposition with high mechanical strength APPLIED MATERIALS, INC. (US) 2024-10-22 US claimed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US claimed
US-20080199977-A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-21 US claimed
EP-1959485-A2 Activated chemical process for enhancing material properties of dielectric films Air Products and Chemicals, Inc. (US) 2008-08-20 EP claimed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US claimed
US-7381659-B2 Method for reducing film stress for SiCOH low-k dielectric materials INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-06-03 US claimed
US-20070181873-A1 Organic-inorganic hybrid polymer and organic insulator composition having the same and methods thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-09 US claimed
US-20070173071-A1 SiCOH dielectric INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-07-26 US claimed
US-20070117408-A1 METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-05-24 US claimed
US-20060165891-A1 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-07-27 US claimed
US-20050194619-A1 SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-09-08 US claimed