Zinc Ion

Zinc Ion

SCHEMBL31069481

[In+3].[Mg+2].[O-2].[Zn+2]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ATP4AATP4BGABBR1GABBR2HMGCR

The experimentally established mechanism targets of Zinc Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL3399166 1.00
Zinc Ion SCHEMBL348887 0.89
SCHEMBL29407976 0.87
SCHEMBL19272476 0.87
Zinc Ion SCHEMBL29395959 0.87
Zinc Ion SCHEMBL30088527 0.87
SCHEMBL636023 0.87
Zinc Ion SCHEMBL269237 0.87
Zinc Ion SCHEMBL19272482 0.87
Zinc Ion SCHEMBL29630377 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119913479-A Vapor deposition process for forming Magnesium Indium Zinc Oxide (MIZO) layer ASM IP私人控股有限公司 2025-05-02 CN claimed
US-20250140555-A1 VAPOR PHASE DEPOSITION PROCCESSES FOR FORMING MAGNESIUM INDIUM ZINC OXIDE (MIZO) LAYERS ASM IP HOLDING B.V. (NL) 2025-05-01 US claimed
CN-118265410-A Composite material, preparation method thereof and photoelectric device TCL科技集团股份有限公司 2024-06-28 CN claimed
US-20250389017-A1 METHODS OF FORMING MAGNESIUM OXIDE LAYERS AND METHODS FOR FORMING MAGNESIUM INDIUM ZINC OXIDE LAYERS INCLUDING A MAGNESIUM OXIDE COMPONENT ASM IP HOLDING BV (NL) 2025-12-25 US disclosed
CN-119913479-A Vapor deposition process for forming Magnesium Indium Zinc Oxide (MIZO) layer ASM IP私人控股有限公司 2025-05-02 CN disclosed
CN-119913479-A Vapor deposition process for forming Magnesium Indium Zinc Oxide (MIZO) layer ASM IP私人控股有限公司 2025-05-02 CN disclosed
CN-119913479-A Vapor deposition process for forming Magnesium Indium Zinc Oxide (MIZO) layer ASM IP私人控股有限公司 2025-05-02 CN disclosed
US-20250140555-A1 VAPOR PHASE DEPOSITION PROCCESSES FOR FORMING MAGNESIUM INDIUM ZINC OXIDE (MIZO) LAYERS ASM IP HOLDING B.V. (NL) 2025-05-01 US disclosed
US-20250140555-A1 VAPOR PHASE DEPOSITION PROCCESSES FOR FORMING MAGNESIUM INDIUM ZINC OXIDE (MIZO) LAYERS ASM IP HOLDING B.V. (NL) 2025-05-01 US disclosed
US-20250140555-A1 VAPOR PHASE DEPOSITION PROCCESSES FOR FORMING MAGNESIUM INDIUM ZINC OXIDE (MIZO) LAYERS ASM IP HOLDING B.V. (NL) 2025-05-01 US disclosed
CN-114729844-B Triaxial sensor, sensor module and electronic device 索尼集团公司 2025-03-21 CN disclosed
EP-4468838-A1 A VERTICAL OXIDE-SEMICONDUCTOR BASED TRANSISTOR ARRAY WITH ISOLATED CHANNELS Imec VZW (BE) 2024-11-27 EP disclosed