Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29407976 | 1.00 | — | — | |
| SCHEMBL19272476 | 1.00 | — | — | |
| Zinc Ion SCHEMBL31069481 | 0.87 | — | — | |
| SCHEMBL349061 | 0.87 | — | — | |
| SCHEMBL30662626 | 0.87 | — | — | |
| Zinc Ion SCHEMBL3399166 | 0.87 | — | — | |
| SCHEMBL15993945 | 0.82 | — | — | |
| SCHEMBL7997997 | 0.82 | — | — | |
| SCHEMBL9126642 | 0.82 | — | — | |
| SCHEMBL8013106 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 750 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110619848-B | Pixel and organic light emitting display device including the same | 三星电子株式会社 | 2025-05-20 | — | — | CN | claimed |
| CN-118281144-A | Composite positive electrode for all-solid battery, method for preparing the same, and all-solid battery comprising the same | SK新能源株式会社 | 2024-07-02 | — | — | CN | claimed |
| US-20240008282-A1 | SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRIC LAYER AND METHOD OF FABRICATING THE SAME | SK Hynix Inc. (KR) | 2024-01-04 | — | — | US | claimed |
| CN-117337044-A | Semiconductor device including oxide channel layer and ferroelectric layer and method of manufacturing the same | 爱思开海力士有限公司 | 2024-01-02 | — | — | CN | claimed |
| CN-116014048-A | Light emitting display device and method of manufacturing the same | 乐金显示有限公司 | 2023-04-25 | — | — | CN | claimed |
| CN-115939283-A | Light emitting display device and method of manufacturing the same | 乐金显示有限公司 | 2023-04-07 | — | — | CN | claimed |
| WO-2023273406-A1 | DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS | 京东方科技集团股份有限公司 | 2023-01-05 | — | — | WO | claimed |
| CN-115548232-A | Display panel, manufacturing method thereof and display device | 京东方科技集团股份有限公司 | 2022-12-30 | — | — | CN | claimed |
| CN-115161641-A | Etching solution additive, etching solution, application of etching solution and etching process | 苏州迈为科技股份有限公司 | 2022-10-11 | — | — | CN | claimed |
| CN-215933641-U | Display panel and display device | 京东方科技集团股份有限公司 | 2022-03-01 | — | — | CN | claimed |
| US-20080061315-A1 | Nitride semiconductor light-emitting element and method of manufacturing the same | SHARP KABUSHIKI KAISHA (JP) | 2008-03-13 | — | — | US | claimed |
| CN-1973387-A | Low power consumption OLED material for display applications | INTEL CORP (US) | 2007-05-30 | — | — | CN | claimed |
| US-20060222968-A1 | LITHOGRAPHIC TEMPLATE AND METHOD OF FORMATION AND USE | FREESCALE SEMICONDUCTOR, INC. (US) | 2006-10-05 | — | — | US | claimed |
| US-7083880-B2 | Lithographic template and method of formation and use | FREESCALE SEMICONDUCTOR, INC. (US) | 2006-08-01 | — | — | US | claimed |
| US-20060054909-A1 | Light emitting diode improved in luminous efficiency | SAMSUNG ELECTRO-MECHANICS CO., LTD. (KR) | 2006-03-16 | — | — | US | claimed |
| WO-2004017388-A2 | LITHOGRAPHIC TEMPLATE AND METHOD OF FORMATION | FREESCALE SEMICONDUCTOR, INC. (US) | 2004-02-26 | — | — | WO | claimed |
| US-20040033424-A1 | Lithographic template and method of formation and use | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2004-02-19 | — | — | US | claimed |
| WO-2003059532-A1 | HIGH CONDUCTIVITY TRANSPARENT CONDUCTOR FORMED USING PULSED ENERGY PROCESS | FLEXLCS, INC. (US) | 2003-07-24 | — | — | WO | claimed |
| US-20030134122-A1 | High conductivity transparent conductor formed using pulsed energy process | WICKBOLDT PAUL (US) | 2003-07-17 | — | — | US | claimed |
| US-6366017-B1 | Organic light emitting diodes with distributed bragg reflector | AGILENT TECHNOLOGIES, INC/ | 2002-04-02 | — | — | US | claimed |