SCHEMBL311348

SCHEMBL311348

C[Al+2].[O-2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL154308 0.75
SCHEMBL968846 0.75
Iodide SCHEMBL1686563 0.75
SCHEMBL137109 0.58
Hydrochloric Acid SCHEMBL726210 0.50
Ethane SCHEMBL21436823 0.50
SCHEMBL2266230 0.50
SCHEMBL21820035 0.50
SCHEMBL5383540 0.50
SCHEMBL31540340 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 218 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4705411-A2 PROCESS AND PLANT FOR PRODUCING SYNTHETIC PARAFFINIC KEROSENE AS JET FUEL Topsoe A/S (DK) 2026-03-11 EP claimed
EP-4705410-A2 PROCESS AND PLANT FOR PRODUCING SYNTHETIC PARAFFINIC KEROSENE AS JET FUEL Topsoe A/S (DK) 2026-03-11 EP claimed
EP-4705412-A1 PROCESS AND PLANT FOR PRODUCING SYNTHETIC PARAFFINIC KEROSENE AS JET FUEL Topsoe A/S (DK) 2026-03-11 EP claimed
CN-119462778-A Metallocene compound, preparation method, metallocene catalyst and application thereof 万华化学集团股份有限公司 2025-02-18 CN claimed
CN-119406456-A Catalytic system for ethylene selective oligomerization, preparation method and application 陕西煤业化工技术研究院有限责任公司 2025-02-11 CN claimed
WO-2024227725-A1 PROCESS AND PLANT FOR PRODUCING SYNTHETIC PARAFFINIC KEROSENE AS JET FUEL TOPSOE A/S (DK) 2024-11-07 WO claimed
WO-2024227724-A2 PROCESS AND PLANT FOR PRODUCING SYNTHETIC PARAFFINIC KEROSENE AS JET FUEL TOPSOE A/S (DK) 2024-11-07 WO claimed
WO-2024227723-A2 PROCESS AND PLANT FOR PRODUCING SYNTHETIC PARAFFINIC KEROSENE AS JET FUEL TOPSOE A/S (DK) 2024-11-07 WO claimed
CN-115400797-B Heteroatom-containing metallocene catalyst system and method for catalyzing alpha-olefin oligomerization 中国科学院山西煤炭化学研究所 2024-09-27 CN claimed
US-20240239726-A1 HIGHLY STRUCTURED, HIGH VINYLIDENE PROPYLENE OLIGOMER AND METHOD OF MAKING CHEVRON USA INC (US) 2024-07-18 US claimed
EP-4097152-A1 POLYMERIZATION PROCESSES THAT INCLUDE GROUP III AND LANTHANIDE BIS-PHENYL-PHENOXY METAL-LIGAND COMPLEXES AND CHAIN TRANSFER AGENTS Dow Global Technologies LLC (US) 2022-12-07 EP claimed
CN-115038725-A Polymerization process comprising group III and lanthanide bis-phenyl-phenoxy metal-ligand complexes and chain transfer agents 陶氏环球技术有限责任公司 2022-09-09 CN claimed
WO-2021155168-A1 POLYMERIZATION PROCESSES THAT INCLUDE GROUP III AND LANTHANIDE BIS-PHENYL-PHENOXY METAL-LIGAND COMPLEXES AND CHAIN TRANSFER AGENTS DOW GLOBAL TECHNOLOGIES LLC (US) 2021-08-05 WO claimed
WO-2021083194-A1 CATALYST FOR OLEFIN POLYMERIZATION AND POLYMERIZATION METHOD USING SAME 中国石油化工股份有限公司 2021-05-06 WO claimed
US-7429541-B2 Method of forming trench isolation in the fabrication of integrated circuitry MICRON TECHNOLOGY, INC. (US) 2008-09-30 US claimed
CN-101255207-A Carbon nickel series olefin polymerization catalyst containing sulfur family elements as well as preparation and uses thereof UNIV FUDAN (CN) 2008-09-03 CN claimed
US-7361614-B2 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry MICRON TECHNOLOGY, INC. (US) 2008-04-22 US claimed
US-7157385-B2 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry MICRON TECHNOLOGY, INC. (US) 2007-01-02 US claimed
US-20060189159-A1 Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry DERDERIAN GARO J 2006-08-24 US claimed
US-20050054213-A1 Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry OMNIMAX INTERNATIONAL, LLC 2005-03-10 US claimed