⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL28893839 | 0.89 | — | — | |
| SCHEMBL30943559 | 0.76 | — | — | |
| Iodide SCHEMBL1686563 | 0.75 | — | — | |
| Fluoride Ion SCHEMBL150863 | 0.75 | — | — | |
| Bromide SCHEMBL42156 | 0.75 | — | — | |
| Water SCHEMBL10375906 | 0.75 | — | — | |
| Hydrochloric Acid SCHEMBL154308 | 0.75 | — | — | |
| SCHEMBL3867733 | 0.75 | — | — | |
| SCHEMBL311348 | 0.75 | — | — | |
| SCHEMBL154041 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 383 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12600816-B2 | Alkylene oxide polymerization using aluminum compounds and phosphorus-nitrogen bases | DOW GLOBAL TECHNOLOGIES LLC (US) | 2026-04-14 | — | — | US | claimed |
| CN-115119510-B | Polymerization of alkylene oxides using aluminum compounds and phosphorus-nitrogen bases | 陶氏环球技术有限责任公司 | 2025-03-14 | — | — | CN | claimed |
| EP-4097168-B1 | ALKYLENE OXIDE POLYMERIZATION USING ALUMINUM COMPOUNDS AND CYCLIC AMIDINES | DOW GLOBAL TECHNOLOGIES LLC (US) | 2023-10-25 | — | — | EP | claimed |
| CN-116099497-A | Composite lithium adsorbent and preparation method thereof | 中国科学院过程工程研究所 | 2023-05-12 | — | — | CN | claimed |
| US-20230095201-A1 | ALKYLENE OXIDE POLYMERIZATION USING ALUMINUM COMPOUNDS AND CYCLIC AMIDINES | DOW GLOBAL TECHNOLOGIES LLC | 2023-03-30 | — | — | US | claimed |
| US-20230092304-A1 | ALKYLENE OXIDE POLYMERIZATION USING ALUMINUM COMPOUNDS AND PHOSPHORUS-NITROGEN BASES | DOW GLOBAL TECHNOLOGIES LLC | 2023-03-23 | — | — | US | claimed |
| EP-4097169-A1 | ALKYLENE OXIDE POLYMERIZATION USING ALUMINUM COMPOUNDS AND PHOSPHORUS-NITROGEN BASES | Dow Global Technologies LLC (US) | 2022-12-07 | — | — | EP | claimed |
| EP-4097168-A1 | ALKYLENE OXIDE POLYMERIZATION USING ALUMINUM COMPOUNDS AND CYCLIC AMIDINES | Dow Global Technologies LLC (US) | 2022-12-07 | — | — | EP | claimed |
| CN-115119510-A | Alkylene oxide polymerization using aluminum compounds and phosphorus-nitrogen bases | 陶氏环球技术有限责任公司 | 2022-09-27 | — | — | CN | claimed |
| CN-115003730-A | Alkylene oxide polymerization using aluminum compounds and cyclic amidines | 陶氏环球技术有限责任公司 | 2022-09-02 | — | — | CN | claimed |
| US-5180687-A | Electroconductive | CANON KABUSHIKI KAISHA (JP) | 1993-01-19 | — | — | US | claimed |
| US-5179042-A | Vapor deposition | CANON KABUSHIKI KAISHA (JP) | 1993-01-12 | — | — | US | claimed |
| US-5154949-A | Additive-containing; good surface morphology; transistors; semiconductors | CANON KABUSHIKI KAISHA (JP) | 1992-10-13 | — | — | US | claimed |
| EP-0493002-A1 | Process for forming deposition film | Tsubouchi, Kazuo (JP) | 1992-07-01 | — | — | EP | claimed |
| EP-0466320-A2 | Process for preparing a semiconductor device including the selective deposition of a metal | CANON KABUSHIKI KAISHA (JP) | 1992-01-15 | — | — | EP | claimed |
| EP-0425084-A1 | Process for forming deposited film by use of alkyl aluminum hydride | CANON KABUSHIKI KAISHA (JP) | 1991-05-02 | — | — | EP | claimed |
| EP-0420594-A2 | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride | CANON KABUSHIKI KAISHA (JP) | 1991-04-03 | — | — | EP | claimed |
| EP-0420595-A2 | Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride | CANON KABUSHIKI KAISHA (JP) | 1991-04-03 | — | — | EP | claimed |
| EP-0420597-A2 | Process for forming a deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device | CANON KABUSHIKI KAISHA (JP) | 1991-04-03 | — | — | EP | claimed |
| EP-0417997-A1 | Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride | CANON KABUSHIKI KAISHA (JP) | 1991-03-20 | — | — | EP | claimed |