SCHEMBL3115474

SCHEMBL3115474

CCN(C)C([SiH3])N(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL438244 0.67
SCHEMBL19170968 0.67
SCHEMBL329234 0.67 FDPS (0.35)
Hydrochloric Acid SCHEMBL29255907 0.64
Water SCHEMBL28817745 0.64
SCHEMBL28821646 0.64
Bromide SCHEMBL11334148 0.64
SCHEMBL27611426 0.64
SCHEMBL14524695 0.64
SCHEMBL5948318 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2251899-B1 Dielectric barrier deposition using nitrogen containing precursor VERSUM MAT US LLC (US) 2018-03-28 EP claimed
US-20100291321-A1 Dielectric Barrier Deposition Using Nitrogen Containing Precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-11-18 US claimed
EP-2251899-A1 Dielectric barrier deposition using nitrogen containing precursor Air Products and Chemicals, Inc. (US) 2010-11-17 EP claimed
EP-2251899-B1 Dielectric barrier deposition using nitrogen containing precursor VERSUM MAT US LLC (US) 2018-03-28 EP disclosed
US-8889235-B2 Dielectric barrier deposition using nitrogen containing precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-11-18 US disclosed
US-20100291321-A1 Dielectric Barrier Deposition Using Nitrogen Containing Precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-11-18 US disclosed
EP-2251899-A1 Dielectric barrier deposition using nitrogen containing precursor Air Products and Chemicals, Inc. (US) 2010-11-17 EP disclosed