⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31067874 | 0.89 | — | — | |
| SCHEMBL10425966 | 0.89 | — | — | |
| Magnesium SCHEMBL31317730 | 0.89 | — | — | |
| SCHEMBL29410059 | 0.87 | — | — | |
| SCHEMBL29406156 | 0.87 | — | — | |
| SCHEMBL29351402 | 0.87 | — | — | |
| SCHEMBL7638445 | 0.87 | — | — | |
| SCHEMBL29428543 | 0.87 | — | — | |
| SCHEMBL10855897 | 0.82 | — | — | |
| SCHEMBL1508939 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4022678-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLATE | Micron Technology, INC. (US) | 2022-07-06 | — | — | EP | claimed |
| EP-3903349-A1 | MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL | Micron Technology, Inc. (US) | 2021-11-03 | — | — | EP | claimed |
| WO-2021041544-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLAT | MICRON TECHNOLOGY, INC. (US) | 2021-03-04 | — | — | WO | claimed |
| CN-109135612-A | A kind of low-melting-point metal micro-nano powder conducting resinl and preparation method thereof | 云南科威液态金属谷研发有限公司 | 2019-01-04 | — | — | CN | claimed |
| CN-121250198-A | Temperature-resistant sacrificial anode containing zinc indium tin alloy and preparation method thereof | 咸阳加鑫机械设备有限责任公司 | 2026-01-02 | — | — | CN | disclosed |
| CN-115710425-B | Energy-absorbing material and preparation method thereof | 云南迈特力医疗技术有限公司 | 2024-09-10 | — | — | CN | disclosed |
| CN-118581460-A | Aluminum sacrificial anode for cathodic protection of seawater cooling system and preparation method | 中核核电运行管理有限公司 | 2024-09-03 | — | — | CN | disclosed |
| CN-118531406-A | Aluminum alloy composite material and aluminum alloy anode | 崇浩光电科技股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| CN-115584131-B | Protective material and preparation method thereof | 云南迈特力医疗技术有限公司 | 2023-09-12 | — | — | CN | disclosed |
| CN-115710425-A | Energy-absorbing material and preparation method thereof | 云南迈特力医疗技术有限公司 | 2023-02-24 | — | — | CN | disclosed |
| CN-115584131-A | Protective material and preparation method thereof | 云南迈特力医疗技术有限公司 | 2023-01-10 | — | — | CN | disclosed |
| CN-217632378-U | Shaft corrosion and scale inhibition device | 李宁 | 2022-10-21 | — | — | CN | disclosed |
| CN-109135612-B | Low-melting-point metal micro-nano powder conductive adhesive and preparation method thereof | 云南科威液态金属谷研发有限公司 | 2021-01-26 | — | — | CN | disclosed |
| CN-112076352-A | Medical liquid metal thermoplastic functional composite material and preparation method and application thereof | 云南科威液态金属谷研发有限公司 | 2020-12-15 | — | — | CN | disclosed |
| CN-106033731-B | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2019-11-05 | — | — | CN | disclosed |
| CN-110223987-A | Display panel and preparation method thereof and display equipment | 香港科技大学 | 2019-09-10 | — | — | CN | disclosed |
| CN-109135612-A | A kind of low-melting-point metal micro-nano powder conducting resinl and preparation method thereof | 云南科威液态金属谷研发有限公司 | 2019-01-04 | — | — | CN | disclosed |
| CN-101771132-B | Organic photovoltaic battery with Cr2O3 as HTL (hole transport layer) and preparation method thereof | WUHAN UNIVERSITY (CN) | 2011-11-30 | — | — | CN | disclosed |
| CN-101771132-A | Organic photovoltaic battery with Cr2O3 as HTL (hole transport layer) and preparation method thereof | UNIV WUHAN | 2010-07-07 | — | — | CN | disclosed |
| US-20100006837-A1 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) | 2010-01-14 | — | — | US | disclosed |