SCHEMBL31288560

SCHEMBL31288560

OCCOCCOCCOCCOCCOCCOCCOCCOC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.44

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.44
KMT2A Q03164 2/20 0.44
TSHR P16473 2/20 0.40
MAPK1 P28482 1/20 0.40
THRB P10828 1/20 0.32
HTT P42858 1/20 0.32
MAPT P10636 1/20 0.32
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31288506 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31312428 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31288592 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31288550 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL30899125 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31288574 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31288459 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31288456 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL7560047 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB
SCHEMBL31312420 1.00 MEN1 (0.44) MEN1KMT2ATSHRMAPK1THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024258075-A1 PHOTORESIST CLEANING SOLUTION COMPOSITION AND METHOD FOR FORMING PHOTORESIST PATTERN USING SAME 에스케이 주식회사 2024-12-19 WO disclosed
WO-2024258074-A1 PHOTORESIST CLEANING SOLUTION COMPOSITION, AND METHOD FOR FORMING PHOTORESIST PATTERN BY USING SAME 에스케이 주식회사 2024-12-19 WO disclosed
WO-2024258076-A1 PHOTORESIST CLEANING SOLUTION COMPOSITION AND METHOD FOR FORMING PHOTORESIST PATTERN USING SAME 에스케이 주식회사 2024-12-19 WO disclosed