SCHEMBL3148951

SCHEMBL3148951

CCC1CCC1C([O])=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3147400 0.82
SCHEMBL26314650 0.80
SCHEMBL3148957 0.80
SCHEMBL4201563 0.78
SCHEMBL4201559 0.78
SCHEMBL13743673 0.75 CHRM2 (0.42)
SCHEMBL26314735 0.73 THRA (0.39)
SCHEMBL26314656 0.73 THRA (0.39)
SCHEMBL18635630 0.73 CA1 (0.42)
SCHEMBL14087080 0.73 POLB (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106502052-B Etching-resistant phenolic aldehyde positive photoresist 潍坊星泰克微电子材料有限公司 2020-01-14 CN disclosed
US-10289002-B2 Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-05-14 US disclosed
US-10042247-B2 Mask blank, method for manufacturing mask blank and transfer mask HOYA CORPORATION (JP) 2018-08-07 US disclosed
US-20170285460-A1 MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK AND TRANSFER MASK HOYA CORPORATION (JP) 2017-10-05 US disclosed
US-9725618-B2 Metal-containing resist underlayer film-forming composition containing polyacid NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-08 US disclosed
US-9645494-B2 Resist underlayer film forming composition containing low molecular weight dissolution accelerator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-05-09 US disclosed
US-20160363863-A1 ELECTRON BEAM RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LACTONE-STRUCTURE-CONTAINING POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
CN-106019847-A Photosensitive polysiloxane composition, protective film and element with protective film 奇美实业股份有限公司 2016-10-12 CN disclosed
US-20160291470-A1 PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTING FILM, AND ELEMENT HAVING PROTECTIVE FILM CHI MEI CORPORATION (TW) 2016-10-06 US disclosed
US-20160251546-A1 METAL-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYACID NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-09-01 US disclosed
US-9093279-B2 Thin film forming composition for lithography containing titanium and silicon NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-07-28 US disclosed
EP-2735904-A1 THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON Nissan Chemical Industries, Ltd. (JP) 2014-05-28 EP disclosed
US-20140120730-A1 THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-05-01 US disclosed
EP-2095189-B1 COMPOSITION FOR FORMING RESIST FOUNDATION FILM CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL IND LTD (JP) 2013-07-10 EP disclosed
US-20100291483-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-18 US disclosed
US-20100075253-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL INDUSTRIES , LTD. (JP) 2010-03-25 US disclosed