SCHEMBL3154676

SCHEMBL3154676

C=C(C)C(=O)OC(Br)C(Br)Br

nearest known ligand 0.44

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.44
TSHR P16473 3/20 0.40
THRB P10828 1/20 0.33
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL822892 0.78
SCHEMBL866203 0.75
SCHEMBL8816362 0.74 ALDH1A1 (0.42) ALDH1A1TSHRTHRBTDP1
SCHEMBL11437995 0.74 ALDH1A1 (0.42) ALDH1A1TSHRTHRBTDP1
SCHEMBL27426933 0.74
SCHEMBL17070900 0.74 ALDH1A1 (0.52) ALDH1A1TSHRTHRBTDP1
SCHEMBL3413032 0.73 TSHR (0.42) ALDH1A1TSHRTHRB
Trimethylammonium SCHEMBL10802051 0.73 TSHR (0.42) ALDH1A1TSHRTHRB
SCHEMBL28886814 0.73 ALDH1A1 (0.41) ALDH1A1TSHRTHRB
SCHEMBL2712214 0.72 ALDH1A1 (0.50) ALDH1A1TSHRTHRBTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8603731-B2 Resist underlayer film forming composition for electron beam lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-12-10 US disclosed
EP-2120095-B1 USE OF A COMPOSITION FOR FORMING A RESIST LOWER LAYER FILM FOR ELECTRON LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2013-04-24 EP disclosed
US-7736822-B2 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2010-06-15 US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 US disclosed
EP-2120095-A1 RESIST LOWER LAYER FILM FORMING COMPOSITION FOR ELECTRON LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2009-11-18 EP disclosed
US-20070190459-A1 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2007-08-16 US disclosed