SCHEMBL31661118

SCHEMBL31661118

C[Si](C)(C)[Hf]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Lithium Ion SCHEMBL21359708 0.54
Lithium Ion SCHEMBL318795 0.54 ALDH1A1 (0.30)
Lithium Ion SCHEMBL380890 0.54
Lithium Ion SCHEMBL395589 0.54
SCHEMBL2184 0.53
SCHEMBL3134205 0.53 ALDH1A1 (0.43)
Bromide SCHEMBL2818240 0.50
Potassium Ion SCHEMBL28913716 0.50
Iodide SCHEMBL25277006 0.47
SCHEMBL8468539 0.47

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260103803-A1 MULTIFUNCTIONAL ETCHING NOZZLE FOR ADDITIVE MANUFACTURING ATLANT 3D APS (DE) 2026-04-16 US disclosed
US-20260011564-A1 METHOD FOR FABRICATION OF FINE-FEATURED ETCH MASK USING DIRECT ATOMIC LAYER PROCESSING ATLANT 3D APS (DK) 2026-01-08 US disclosed
US-12515403-B1 Multifunctional deposition nozzle for additive manufacturing ATLANT 3D, APS (DK) 2026-01-06 US disclosed
WO-2025151845-A1 METHOD FOR FABRICATION OF FINE-FEATURED ETCH MASK USING DIRECT ATOMIC LAYER PROCESSING ATLANT 3D, APS (DK) 2025-07-17 WO disclosed