SCHEMBL317287

SCHEMBL317287

[SiH3][SiH2]Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2734171 0.93
SCHEMBL10381020 0.93
Hydrochloric Acid SCHEMBL14876618 0.93
Methane SCHEMBL10582257 0.93
SCHEMBL25283357 0.78
Lindane SCHEMBL3766691 0.78 LMNA (0.50)
SCHEMBL1672412 0.72
SCHEMBL5097275 0.67
SCHEMBL9099487 0.67
SCHEMBL28842076 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 754 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4748968-A1 METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS Hansol Chemical Co., Ltd (KR) 2026-05-27 EP claimed
US-12635431-B2 High aspect ratio carbon layer etch with improved throughput and process window TOKYO ELECTRON LIMITED (JP) 2026-05-19 US claimed
EP-4667616-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR Hansol Chemical Co., Ltd (KR) 2025-12-24 EP claimed
US-20250369114-A1 METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR HANSOL CHEMICAL CO LTD (KR) 2025-12-04 US claimed
US-20250232981-A1 HIGH ASPECT RATIO CARBON LAYER ETCH WITH IMPROVED THROUGHPUT AND PROCESS WINDOW TOKYO ELECTRON LIMITED (JP) 2025-07-17 US claimed
EP-4509463-A1 METHOD FOR PRODUCING COMPOUND Yamanaka Hutech Corporation (JP) 2025-02-19 EP claimed
US-20250038003-A1 LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS LAM RESEARCH CORPORATION (US) 2025-01-30 US claimed
WO-2025018802-A1 METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS 주식회사 한솔케미칼 2025-01-23 WO claimed
CN-119013227-A Process for producing compound 山中修科技股份有限公司 2024-11-22 CN claimed
EP-4449479-A1 LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS Lam Research Corporation (US) 2024-10-23 EP claimed
US-5625088-A METAL CATALYZED REACTION OF SILICON AND CHLOROMETHANE WACKER-CHEMIE GMBH (DE) 1997-04-29 US claimed
EP-0295062-B1 POLYSILACYCLOBUTASILAZANES DOW CORNING CORPORATION (US) 1992-12-02 EP claimed
US-5064786-A Crosslinking, Pyrolysis, Ceramics DOW CORNING CORPORATION (US) 1991-11-12 US claimed
US-4981666-A HYDROLYSIS OF SILANE SHIN-ETSU CHEMICAL CO., LTD. (JP) 1991-01-01 US claimed
US-4929742-A CROSSLINKABLE PRECERAMIC POLYMERS DOW CORNING CORPORATION (US) 1990-05-29 US claimed
US-4916200-A Reacting with chloro(silane or disilane) and ammonia; crosslinking DOW CORNING CORPORATION (US) 1990-04-10 US claimed
US-4849196-A FROM SILICON OXIDE AND CARBON, TRACE AMOUNTS OF IRON, COBALT AND NICKEL CATALYSTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 1989-07-18 US claimed
EP-0295807-A2 Silane modified polysilacyclobutasilazanes DOW CORNING CORPORATION (US) 1988-12-21 EP claimed
EP-0295062-A2 Polysilacyclobutasilazanes DOW CORNING CORPORATION (US) 1988-12-14 EP claimed
EP-0178191-A1 Organosilicon resins containing disilanes and having mechanical and thermal properties, and their use, especially in water-proofing building materials RHONE-POULENC CHIMIE (FR) 1986-04-16 EP claimed