SCHEMBL3202966

SCHEMBL3202966

[O-2].[O-2].[O-2].[O-2].[Sr+2].[W+6]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4B

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3135196 0.87
SCHEMBL48300 0.82
SCHEMBL10384897 0.82
SCHEMBL11058960 0.82
SCHEMBL9800525 0.82
SCHEMBL7544345 0.82
SCHEMBL10383898 0.82
SCHEMBL2245 0.82
SCHEMBL18224220 0.67
SCHEMBL5091413 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260138927-A1 FABRICATION OF DOPED TRANSPARENT POLYCRYSTALLINE CERAMIC MATERIALS CORNING INCORPORATED (US) 2026-05-21 US claimed
CN-120076885-A Manufacture of doped transparent polycrystalline ceramic materials 康宁公司 2025-05-30 CN claimed
WO-2024172834-A2 FABRICATION OF DOPED TRANSPARENT POLYCRYSTALLINE CERAMIC MATERIALS CORNING INCORPORATED (US) 2024-08-22 WO claimed
US-20040196620-A1 Dielectric laminate for a capacitor SHIPLEY COMPANY, L.L.C. 2004-10-07 US claimed
US-6728092-B2 Formation of thin film capacitors SHIPLEY-COMPANY, L.L.C. 2004-04-27 US claimed
US-20020176989-A1 Dielectric laminate for a capacitor SHIPLEY COMPANY, L.L.C. 2002-11-28 US claimed
US-6433993-B1 MULTILAYER; FLEXIBLE METAL LAYER, DIELECTRICS, BARRIER; COMBUSTION VAPOR DEPOSITION MICROCOATING TECHNOLOGIES, INC. 2002-08-13 US claimed
US-6270835-B1 PROVIDING THREE-LAYER STRUCTURE COMPRISING DIELECTRIC LAYER AND ELECTRICALLY CONDUCTIVE LAYERS; PATTERNING ELECTRICALLY CONDUCTIVE LAYER TO FORM STRUCTURE; EMBEDDING INTO SECOND DIELECTRIC MATERIAL; PATTERNING ELECTRICALLY CONDUCTIVE LAYER MICROCOATING TECHNOLOGIES, INC. 2001-08-07 US claimed
EP-1005260-A2 Formation of thin film capacitors MicroCoating Technologies, Inc. (US) 2000-05-31 EP claimed
US-20260138927-A1 FABRICATION OF DOPED TRANSPARENT POLYCRYSTALLINE CERAMIC MATERIALS CORNING INCORPORATED (US) 2026-05-21 US disclosed
CN-120076885-A Manufacture of doped transparent polycrystalline ceramic materials 康宁公司 2025-05-30 CN disclosed
WO-2024172834-A2 FABRICATION OF DOPED TRANSPARENT POLYCRYSTALLINE CERAMIC MATERIALS CORNING INCORPORATED (US) 2024-08-22 WO disclosed
US-8183552-B2 Semiconductor memory device KABUSHIKI KAISHA TOSHIBA (JP) 2012-05-22 US disclosed
US-20100038617-A1 SEMICONDUCTOR MEMORY DEVICE KABUSHIKI KAISHA TOSHIBA (JP) 2010-02-18 US disclosed
EP-1251530-A2 Dielectric laminate for a capacitor Shipley Company LLC (US) 2002-10-23 EP disclosed
US-20020145845-A1 Formation of thin film capacitors MICROCOATING TECHNOLOGIES OF (US) 2002-10-10 US disclosed
US-6433993-B1 MULTILAYER; FLEXIBLE METAL LAYER, DIELECTRICS, BARRIER; COMBUSTION VAPOR DEPOSITION MICROCOATING TECHNOLOGIES, INC. 2002-08-13 US disclosed
US-6270835-B1 PROVIDING THREE-LAYER STRUCTURE COMPRISING DIELECTRIC LAYER AND ELECTRICALLY CONDUCTIVE LAYERS; PATTERNING ELECTRICALLY CONDUCTIVE LAYER TO FORM STRUCTURE; EMBEDDING INTO SECOND DIELECTRIC MATERIAL; PATTERNING ELECTRICALLY CONDUCTIVE LAYER MICROCOATING TECHNOLOGIES, INC. 2001-08-07 US disclosed
US-6207522-B1 Formation of thin film capacitors MICROCOATING TECHNOLOGIES 2001-03-27 US disclosed
EP-1005260-A2 Formation of thin film capacitors MicroCoating Technologies, Inc. (US) 2000-05-31 EP disclosed