SCHEMBL3203531

SCHEMBL3203531

O=C1C2C3C=CC(O3)C2C(=O)N1OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ATM Q13315 2/20 0.35
CA2 P00918 5/20 0.32
CA1 P00915 4/20 0.32
ALDH1A1 P00352 3/20 0.32
MAPT P10636 1/20 0.32
HPGD P15428 1/20 0.32
HTT P42858 1/20 0.32
CACNA1B Q00975 1/20 0.32
APBA1 Q02410 1/20 0.32
HSD17B10 Q99714 1/20 0.32
CYP3A4 P08684 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16765650 0.99 ATM (0.34) ATMCA2CA1ALDH1A1MAPT
SCHEMBL4835348 0.85 CA2 (0.38) CA2CA1
SCHEMBL4835123 0.84 CA2 (0.34) CA2CA1ALDH1A1
SCHEMBL14448183 0.84 ATM (0.42) ATMALDH1A1MAPTHPGDHTT
SCHEMBL14410627 0.84 ATM (0.42) ATMALDH1A1MAPTHPGDHTT
SCHEMBL19322850 0.84 ATM (0.42) ATMALDH1A1MAPTHPGDHTT
SCHEMBL108164 0.84 ATM (0.42) ATMALDH1A1MAPTHPGDHTT
SCHEMBL13098326 0.84 ATM (0.33) ATMALDH1A1MAPTHPGDHTT
SCHEMBL4837339 0.84 CA2 (0.41) CA2CA1
SCHEMBL4834833 0.83 CA2 (0.36) CA2CA1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9448474-B2 Positive photosensitive resin composition and pattern forming method CHI MEI CORPORATION (TW) 2016-09-20 US disclosed
US-20150160554-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE CHI MEI CORPORATION (TW) 2015-06-11 US disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-8206888-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2012-06-26 US disclosed
US-20100028800-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-04 US disclosed
EP-1953593-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed