SCHEMBL3204840

SCHEMBL3204840

CC(C)(C=CC(=O)O)CCCC(C)(C)C=CC(=O)O

nearest known ligand 0.51

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TBXAS1 P24557 1/20 0.51
TSHR P16473 3/20 0.36
TP53 P04637 1/20 0.36
EGLN1 Q9GZT9 1/20 0.36
EGLN3 Q9H6Z9 1/20 0.36
TDP1 Q9NUW8 2/20 0.33
ACLY P53396 1/20 0.33
FFAR1 O14842 1/20 0.33
CPT2 P23786 1/20 0.33
HCAR2 Q8TDS4 5/20 0.32
GABRR1 P24046 2/20 0.32
GABRR2 P28476 2/20 0.32
BLM P54132 2/20 0.32
GABRR3 A8MPY1 1/20 0.32
LMNA P02545 1/20 0.32
APEX1 P27695 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
S1PR1 P21453 1/20 0.31
S1PR3 Q99500 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3204835 1.00 TBXAS1 (0.51) TBXAS1TSHRTP53EGLN1EGLN3
SCHEMBL3200006 0.95 TBXAS1 (0.55) TBXAS1TSHRTP53EGLN1EGLN3
SCHEMBL3200011 0.95 TBXAS1 (0.55) TBXAS1TSHRTP53EGLN1EGLN3
SCHEMBL3192914 0.90 TBXAS1 (0.46) TBXAS1TSHRTP53EGLN1EGLN3
SCHEMBL3192910 0.90 TBXAS1 (0.46) TBXAS1TSHRTP53EGLN1EGLN3
SCHEMBL6447503 0.89 TBXAS1 (0.48) TBXAS1HCAR2BLMAPEX1S1PR1
SCHEMBL22500984 0.89 TBXAS1 (0.48) TBXAS1HCAR2BLMAPEX1S1PR1
SCHEMBL6450261 0.87 TBXAS1 (0.50) TBXAS1HCAR2BLMAPEX1S1PR1
SCHEMBL6450323 0.84 TBXAS1 (0.43) TBXAS1TSHRTP53EGLN1EGLN3
SCHEMBL10696180 0.80 TBXAS1 (0.41) TBXAS1TSHRTP53EGLN1EGLN3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9817311-B2 Resist pattern-forming method, substrate-processing method, and photoresist composition JSR CORPORATION (JP) 2017-11-14 US disclosed
US-20160266489-A1 RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2016-09-15 US disclosed
US-9417527-B2 Resist pattern-forming method, substrate-processing method, and photoresist composition JSR CORPORATION (JP) 2016-08-16 US disclosed
US-20150048051-A1 RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2015-02-19 US disclosed
US-8206888-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2012-06-26 US disclosed
US-20100028800-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-04 US disclosed
EP-1953593-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed