Arsenic

Arsenic

SCHEMBL3208094

[AsH3].[Ge].[Se].[Te]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Selenium SCHEMBL2297532 0.87
Arsenic SCHEMBL8332415 0.87
Arsenic SCHEMBL9897640 0.87
Selenium SCHEMBL31511310 0.87
Selenium SCHEMBL1205577 0.75
Arsenic SCHEMBL347971 0.75
Selenium SCHEMBL1199666 0.75
Arsenic SCHEMBL2027155 0.75
Arsenic SCHEMBL10482933 0.75
Selenium SCHEMBL29906129 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5923808-A Mid-infrared fiber-optic spectroscopic probe for use at elevated temperatures MELLING PETER J (US) 1999-07-13 US claimed
US-20130112914-A1 Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-05-09 US disclosed
US-7682976-B2 Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-23 US disclosed
US-20090149006-A1 Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions SAMSUNG ELECTRONICS CO., LTD. 2009-06-11 US disclosed
US-5923808-A Mid-infrared fiber-optic spectroscopic probe for use at elevated temperatures MELLING PETER J (US) 1999-07-13 US disclosed