⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2119594 | 0.87 | — | — | |
| Arsenic SCHEMBL9897640 | 0.87 | — | — | |
| SCHEMBL61894 | 0.87 | — | — | |
| Arsenic SCHEMBL2027155 | 0.75 | — | — | |
| SCHEMBL3746078 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL3439102 | 0.75 | — | — | |
| SCHEMBL1205976 | 0.75 | — | — | |
| SCHEMBL3274556 | 0.75 | — | — | |
| Arsenic SCHEMBL3208094 | 0.75 | — | — | |
| SCHEMBL9898340 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 246 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113053944-B | Nonvolatile memory device having resistance change structure | 爱思开海力士有限公司 | 2024-08-02 | — | — | CN | claimed |
| CN-113130532-B | Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same | 爱思开海力士有限公司 | 2023-11-07 | — | — | CN | claimed |
| CN-109256161-B | Nonvolatile memory device and method of operating nonvolatile memory device | 爱思开海力士有限公司 | 2023-01-20 | — | — | CN | claimed |
| US-11508741-B2 | Nonvolatile memory device having resistance change structure | SK Hynix Inc. (KR) | 2022-11-22 | — | — | US | claimed |
| US-11309354-B2 | Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same | SK Hynix Inc. (KR) | 2022-04-19 | — | — | US | claimed |
| CN-109037317-B | Ferroelectric memory device | 爱思开海力士有限公司 | 2021-09-10 | — | — | CN | claimed |
| CN-113130532-A | Three-dimensional nonvolatile memory device having resistance change structure and method of operating the same | 爱思开海力士有限公司 | 2021-07-16 | — | — | CN | claimed |
| US-20210202577-A1 | THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE HAVING RESISTANCE CHANGE STRUCTURE AND METHOD OF OPERATING THE SAME | SK Hynix Inc. (KR) | 2021-07-01 | — | — | US | claimed |
| US-20210202514-A1 | NONVOLATILE MEMORY DEVICE HAVING RESISTANCE CHANGE STRUCTURE | SK Hynix Inc. (KR) | 2021-07-01 | — | — | US | claimed |
| CN-113053944-A | Nonvolatile memory device having resistance change structure | 爱思开海力士有限公司 | 2021-06-29 | — | — | CN | claimed |
| CN-101271961-B | Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same | SAMSUNG ELECTRONICS CO LTD | 2011-08-31 | — | — | CN | claimed |
| US-20100144087-A1 | METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES INCLUDING AN ADIABATIC LAYER | HA YONG-HO | 2010-06-10 | — | — | US | claimed |
| US-20100096609-A1 | PHASE CHANGE MEMORY DEVICE HAVING A LAYERED PHASE CHANGE LAYER COMPOSED OF MULTIPLE PHASE CHANGE MATERIALS AND METHOD FOR MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2010-04-22 | — | — | US | claimed |
| US-7692176-B2 | Phase-changeable memory devices including an adiabatic layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-04-06 | — | — | US | claimed |
| US-7563639-B2 | Phase-changeable memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-07-21 | — | — | US | claimed |
| US-20080230373-A1 | METHODS OF FORMING A PHASE-CHANGE MATERIAL LAYER INCLUDING TELLURIUM AND METHODS OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. | 2008-09-25 | — | — | US | claimed |
| CN-101271961-A | Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2008-09-24 | — | — | CN | claimed |
| US-20070267669-A1 | Phase-changeable memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-11-22 | — | — | US | claimed |
| US-20070243659-A1 | PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-10-18 | — | — | US | claimed |
| US-20060039192-A1 | Phase-changeable memory devices including an adiabatic layer and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | claimed |