SCHEMBL3237479

SCHEMBL3237479

[Co]C1=CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8973287 0.63
SCHEMBL13461879 0.60
SCHEMBL15468280 0.60
SCHEMBL28852321 0.60
SCHEMBL12847209 0.60
SCHEMBL10177686 0.60
SCHEMBL26292 0.60
SCHEMBL8466052 0.57
SCHEMBL8467152 0.57
SCHEMBL28952826 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US claimed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US claimed
US-20220298625-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2022-09-22 US claimed
US-11384429-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2022-07-12 US claimed
WO-2021041593-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. (US) 2021-03-04 WO claimed
US-20210062330-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2021-03-04 US claimed
US-20170321320-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2017-11-09 US claimed
US-20150325446-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2015-11-12 US claimed
WO-2009134840-A2 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. (US) 2009-11-05 WO claimed
WO-2009134925-A2 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS APPLIED MATERIALS, INC. (US) 2009-11-05 WO claimed
US-20090269507-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2009-10-29 US claimed
US-20080268635-A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS APPLIED MATERIALS, INC. 2008-10-30 US claimed
WO-2007121249-A2 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. (US) 2007-10-25 WO claimed
US-20070202254-A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. 2007-08-30 US claimed
US-12564025-B2 Interconnect with redeposited metal capping and method forming same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-02-24 US disclosed
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US disclosed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US disclosed
US-20070202254-A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. 2007-08-30 US disclosed
US-20060240187-A1 Deposition of an intermediate catalytic layer on a barrier layer for copper metallization APPLIED MATERIALS, INC. 2006-10-26 US disclosed
US-20060153973-A1 Ruthenium layer formation for copper film deposition APPLIED MATERIALS, INC. 2006-07-13 US disclosed