Cyclohexane

Cyclohexane

SCHEMBL3247017

C1CCCCC1.CCCC(=O)O.[AlH3]

nearest known ligand 0.77

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 2/20 0.77
HDAC3 O15379 1/20 0.77
HDAC1 Q13547 1/20 0.77
HDAC2 Q92769 1/20 0.77
HDAC8 Q9BY41 1/20 0.77
AKR1B1 P15121 1/20 0.50
GPR84 Q9NQS5 7/20 0.48
PPARG P37231 7/20 0.48
PPARD Q03181 7/20 0.48
PPARA Q07869 7/20 0.48
HDAC11 Q96DB2 5/20 0.48
TSHR P16473 4/20 0.48
PTPN1 P18031 3/20 0.48
ALDH1A1 P00352 2/20 0.48
TLR2 O60603 2/20 0.48
TDP1 Q9NUW8 2/20 0.48
FABP4 P15090 2/20 0.48
KMT2A Q03164 2/20 0.48
SLC22A6 Q4U2R8 1/20 0.48
SLC22A8 Q8TCC7 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Cyclohexane SCHEMBL7426842 0.97 FFAR3 (0.81) FFAR3HDAC3HDAC1HDAC2HDAC8
Cyclohexane SCHEMBL16341925 0.97 FFAR3 (0.81) FFAR3HDAC3HDAC1HDAC2HDAC8
Cyclohexane SCHEMBL3364580 0.97 FFAR3 (0.81) FFAR3HDAC3HDAC1HDAC2HDAC8
Cyclohexane SCHEMBL27815810 0.97 FFAR3 (0.81) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL3509473 0.97 FFAR3 (0.81) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL11348636 0.97
Cyclohexane SCHEMBL458810 0.97 FFAR3 (0.81) FFAR3HDAC3HDAC1HDAC2HDAC8
Cyclohexane SCHEMBL2800628 0.94 FFAR3 (0.77) FFAR3HDAC3HDAC1HDAC2HDAC8
Cyclohexane SCHEMBL1316440 0.94 FFAR3 (0.77) FFAR3HDAC3HDAC1HDAC2HDAC8
Cyclohexane SCHEMBL9778100 0.94 FFAR3 (0.77) FFAR3HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119639349-A Polishing composition, preparation method and application thereof 深圳市鑫鸿达清洗技术有限公司 2025-03-18 CN claimed
CN-115739921-B Resource treatment method for municipal solid waste incineration fly ash 江苏理工学院 2024-08-20 CN claimed
CN-112993393-B Polymer electrolyte with Al as center and preparation method and application thereof 北京卫蓝新能源科技有限公司 2023-04-21 CN claimed
CN-111697219-B Silicon-carbon composite material, preparation method thereof, negative electrode and application thereof 深圳市金牌新能源科技有限责任公司 2023-04-21 CN claimed
CN-119639349-A Polishing composition, preparation method and application thereof 深圳市鑫鸿达清洗技术有限公司 2025-03-18 CN disclosed
CN-115739921-B Resource treatment method for municipal solid waste incineration fly ash 江苏理工学院 2024-08-20 CN disclosed
CN-111697219-B Silicon-carbon composite material, preparation method thereof, negative electrode and application thereof 深圳市金牌新能源科技有限责任公司 2023-04-21 CN disclosed
CN-112993393-B Polymer electrolyte with Al as center and preparation method and application thereof 北京卫蓝新能源科技有限公司 2023-04-21 CN disclosed
CN-113929152-A Composite material precursor, composite material, preparation method of composite material and positive plate 恒大新能源技术(深圳)有限公司 2022-01-14 CN disclosed
US-9150962-B2 Method for producing substrate with metal body JSR CORPORATION (JP) 2015-10-06 US disclosed
US-9080065-B2 Composition for forming aluminum-containing film, and method for forming aluminum-containing film JSR CORPORATION (JP) 2015-07-14 US disclosed
US-20140134331-A1 METHOD FOR PRODUCING SUBSTRATE WITH METAL BODY JSR CORPORATION (JP) 2014-05-15 US disclosed
US-20060257667-A1 Composition for forming silicon-aluminum film, silicon-aluminum film and method for forming the same JSR CORPORATION (JP) 2006-11-16 US disclosed
US-7071084-B2 Methods for forming wiring and electrode JSR CORPORATION (JP) 2006-07-04 US disclosed
US-20060024937-A1 Methods for forming wiring and electrode JSR CORPORATION (JP) 2006-02-02 US disclosed
US-6953600-B2 Complex of an amine compound and aluminum hydride and an organic solvent used to form wiring or an electrode which can be suitably used in a variety of electronic devices JSR CORPORATION (JP) 2005-10-11 US disclosed
US-20040192038-A1 Methods for forming wiring and electrode JSR CORPORATION (JP) 2004-09-30 US disclosed
EP-1462544-A2 Methods for forming wiring and electrode JSR Corporation (JP) 2004-09-29 EP disclosed
CN-1461779-A Substance for forming electrically-conducting film and electrically-conducting film and its manufacturing method JSR CORP (JP) 2003-12-17 CN disclosed
US-20030224152-A1 Complex of an amine compound and aluminum hydride and an organic solvent used to form wiring or an electrode which can be suitably used in a variety of electronic devices JSR CORPORATION (JP) 2003-12-04 US disclosed