Phosphine

Phosphine

SCHEMBL3264086

B.P.[Co]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphine SCHEMBL27626535 0.87
Phosphine SCHEMBL15475257 0.87
Phosphine SCHEMBL3266420 0.87
Phosphine SCHEMBL28466358 0.87
Phosphine SCHEMBL722469 0.87
Phosphine SCHEMBL25272527 0.82
SCHEMBL2143586 0.82
Phosphine SCHEMBL18919825 0.82
Phosphine SCHEMBL862073 0.82
Phosphine SCHEMBL16632770 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103074649-B Strengthen mine individual hydraulic prop cylinder tube preserving method SICHUAN HEAVY TRUCK WANGPAI XINGCHENG HYDRAULIC PART CO., LTD. (CN) 2015-10-07 CN claimed
US-10396045-B2 Metal on both sides of the transistor integrated with magnetic inductors INTEL CORPORATION (US) 2019-08-27 US disclosed
US-20190006296-A1 METAL ON BOTH SIDES OF THE TRANSISTOR INTEGRATED WITH MAGNETIC INDUCTORS INTEL CORP (US) 2019-01-03 US disclosed
CN-103074649-B Strengthen mine individual hydraulic prop cylinder tube preserving method SICHUAN HEAVY TRUCK WANGPAI XINGCHENG HYDRAULIC PART CO., LTD. (CN) 2015-10-07 CN disclosed
CN-103074649-B Strengthen mine individual hydraulic prop cylinder tube preserving method SICHUAN HEAVY TRUCK WANGPAI XINGCHENG HYDRAULIC PART CO., LTD. (CN) 2015-10-07 CN disclosed
US-20100022083-A1 CARBON NANOTUBE INTERCONNECT STRUCTURES INTEL CORPORATION (US) 2010-01-28 US disclosed
US-7625817-B2 Method of fabricating a carbon nanotube interconnect structures INTEL CORPORATION (US) 2009-12-01 US disclosed
CN-100397612-C Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs INTEL CORP (US) 2008-06-25 CN disclosed
US-20070155158-A1 Carbon nanotube interconnect structures INTEL CORPORATION 2007-07-05 US disclosed
CN-1322572-C Interconnect structures and a method of electroless introduction of interconnect structures INTEL CORP (US) 2007-06-20 CN disclosed
US-7105363-B2 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same FREESCALE SEMICONDUCTOR, INC. (US) 2006-09-12 US disclosed
US-20050158992-A1 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same FREESCALE SEMICONDUCTOR, INC. 2005-07-21 US disclosed
CN-1623228-A Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures INTEL CORP (US) 2005-06-01 CN disclosed
US-6885074-B2 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same FREESCALE SEMICONDUCTOR, INC. (US) 2005-04-26 US disclosed
US-6867473-B2 Plating a conductive material on a dielectric material INTEL CORPORATION (US) 2005-03-15 US disclosed
WO-2004051742-A1 MAGNETOELECTRONICS DEVICE AND METHOD FOR FABRICATING THE SAME FREESCALE SEMICONDUCTOR, INC. (US) 2004-06-17 WO disclosed
US-20040104483-A1 Plating a conductive material on a dielectric material GOODNER MICHAEL D (US) 2004-06-03 US disclosed
US-20040099908-A1 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same FREESCALE SEMICONDUCTOR, INC. 2004-05-27 US disclosed
CN-1484856-A Interconnect structure and method for electroless introduction of interconnect structure ض� 2004-03-24 CN disclosed
US-6682989-B1 Plating a conductive material on a dielectric material INTEL CORPORATION 2004-01-27 US disclosed