SCHEMBL3270310

SCHEMBL3270310

C1=CCC([W]C2=CC=CC2)=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1351909 1.00
Hydrochloric Acid SCHEMBL236136 0.97
Hydrochloric Acid SCHEMBL7795112 0.97
SCHEMBL3884324 0.97
Hydrochloric Acid SCHEMBL19471365 0.94
Carbon Monoxide SCHEMBL11878120 0.91
SCHEMBL28694932 0.75
Hydrochloric Acid SCHEMBL22188703 0.75
Carbon Monoxide SCHEMBL9130263 0.71
SCHEMBL28966299 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 153 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250253191-A1 METHODS OF MANUFACTURING INTERCONNECT STRUCTURES APPLIED MATERIALS, INC. (US) 2025-08-07 US claimed
US-12252452-B2 Coatings on particles of high energy materials and methods of forming same Forge Nano, Inc. (US) 2025-03-18 US claimed
WO-2025034805-A1 METHODS OF FORMING CONFORMAL TRANSITION METAL DICHALCOGENIDE FILMS APPLIED MATERIALS, INC. (US) 2025-02-13 WO claimed
US-20250051902-A1 METHODS OF FORMING CONFORMAL TRANSITION METAL DICHALCOGENIDE FILMS APPLIED MATERIALS, INC. (US) 2025-02-13 US claimed
CN-111233940-B Tungsten complex and preparation method and application thereof 苏州欣溪源新材料科技有限公司 2022-08-30 CN claimed
CN-114038608-B Low-resistivity solar cell conductive paste 西安宏星电子浆料科技股份有限公司 2022-04-19 CN claimed
CN-114038608-A Low-resistivity solar cell conductive paste 西安宏星电子浆料科技股份有限公司 2022-02-11 CN claimed
US-10833325-B2 Negative electrode active material KABUSHIKI KAISHA TOYOTA JIDOSHOKKI (JP) 2020-11-10 US claimed
CN-111233940-A Tungsten complex and preparation method and application thereof 苏州欣溪源新材料科技有限公司 2020-06-05 CN claimed
US-20180087164-A1 TUNING ELECTRODE SURFACE ELECTRONICS WITH THIN LAYERS CALIFORNIA INST OF TECHN (US) 2018-03-29 US claimed
US-20140072479-A1 Delivery Equipment for the Solid Precursor Particles NANMAT TECHNOLOGY CO., LTD. (TW) 2014-03-13 US claimed
EP-1242647-B1 METHOD OF DEPOSITING TRANSITION METAL NITRIDE THIN FILMS ASM INT (NL) 2003-08-13 EP claimed
JP-5209272-A None JP disclosed
US-20260082881-A1 MEMORY DEVICES INCLUDING SLOT STRUCTURES MICRON TECHNOLOGY INC (US) 2026-03-19 US disclosed
US-20260047356-A1 METHODS OF FORMING TRANSITION METAL DICHALCOGENIDE FILMS APPLIED MATERIALS, INC. (US) 2026-02-12 US disclosed
US-12544749-B2 Method for preparing single-atom, atomic cluster or single-molecular catalyst for oxidative coupling of methane using chemical vapor deposition KOREA INSTITUTE OF ENERGY RESEARCH (KR) 2026-02-10 US disclosed
US-7691287-B2 Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization DUPONT AIR PRODUCTS NANOMATERIALS LLC (US) 2010-04-06 US disclosed
US-20080182485-A1 Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization VERSUM MATERIALS US, LLC 2008-07-31 US disclosed
US-20050191515-A1 Very low thermal expansion composite SHIPLEY COMPANY, L.L.C. (US) 2005-09-01 US disclosed
JP-H05209272-A METHOD FOR GROWING TUNGSTEN FILM NEC CORP 1993-08-20 JP disclosed