Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL7795112 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL19471365 | 0.97 | — | — | |
| SCHEMBL1351909 | 0.97 | — | — | |
| SCHEMBL3270310 | 0.97 | — | — | |
| SCHEMBL3884324 | 0.94 | — | — | |
| Carbon Monoxide SCHEMBL11878120 | 0.88 | — | — | |
| Hydrochloric Acid SCHEMBL22188703 | 0.79 | — | — | |
| SCHEMBL28694932 | 0.73 | — | — | |
| Hydrochloric Acid SCHEMBL22188700 | 0.73 | — | — | |
| Carbon Monoxide SCHEMBL9130263 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 154 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12252452-B2 | Coatings on particles of high energy materials and methods of forming same | Forge Nano, Inc. (US) | 2025-03-18 | — | — | US | claimed |
| US-20180087164-A1 | TUNING ELECTRODE SURFACE ELECTRONICS WITH THIN LAYERS | CALIFORNIA INST OF TECHN (US) | 2018-03-29 | — | — | US | claimed |
| US-20120003833-A1 | METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS | APPLIED MATERIALS, INC. (US) | 2012-01-05 | — | — | US | claimed |
| WO-2012003341-A2 | METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS | APPLIED MATERIALS, INC. (US) | 2012-01-05 | — | — | WO | claimed |
| US-7745333-B2 | Methods for depositing tungsten layers employing atomic layer deposition techniques | APPLIED MATERIALS, INC. (US) | 2010-06-29 | — | — | US | claimed |
| US-6863727-B1 | Method of depositing transition metal nitride thin films | ASM INTERNATIONAL N.V. (NL) | 2005-03-08 | — | — | US | claimed |
| EP-1242647-B1 | METHOD OF DEPOSITING TRANSITION METAL NITRIDE THIN FILMS | ASM INT (NL) | 2003-08-13 | — | — | EP | claimed |
| EP-1242647-A1 | METHOD OF DEPOSITING TRANSITION METAL NITRIDE THIN FILMS | ASM Microchemistry Oy (FI) | 2002-09-25 | — | — | EP | claimed |
| WO-2001027347-A1 | METHOD OF DEPOSITING TRANSITION METAL NITRIDE THIN FILMS | ASM MICROCHEMISTRY OY (FI) | 2001-04-19 | — | — | WO | claimed |
| US-6110859-A | Hybrid catalyst system for converting hydrocarbons and a method of making and using such catalyst system | PHILLIPS PETROLEUM COMPANY (US) | 2000-08-29 | — | — | US | claimed |
| US-6090992-A | COMPRISING ALUMINA, AT LEAST ONE CARBURIZED TRANSITION METAL, AND AT LEAST ONE HALOGEN COMPONENT. | PHILLIPS PETROLEUM COMPANY (US) | 2000-07-18 | — | — | US | claimed |
| US-20260133485-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION | JSR CORPORATION (JP) | 2026-05-14 | — | — | US | disclosed |
| US-20260093180-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FILM FORMATION | JSR CORPORATION (JP) | 2026-04-02 | — | — | US | disclosed |
| US-20250314008-A1 | Ceramic-Polymer Composites and Methods of Making the Same | TEMPLE UNIVERSITY OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION | 2025-10-09 | — | — | US | disclosed |
| US-12392034-B2 | Method for producing organic-inorganic hybrid materials | CIC NANOGUNE—ASOCIACIÓN CENTRO DE INVESTIGACIÓN COOPERATIVA EN NANOCIENCIAS (ES) | 2025-08-19 | — | — | US | disclosed |
| US-6372598-B2 | FORMING SACRIFICIAL METAL LAYER; REPLACEMENT | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-04-16 | — | — | US | disclosed |
| US-20020006708-A1 | METHOD OF FORMING SELECTIVE METAL LAYER AND METHOD OF FORMING CAPACITOR AND FILLING CONTACT HOLE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-01-17 | — | — | US | disclosed |
| WO-2001027347-A1 | METHOD OF DEPOSITING TRANSITION METAL NITRIDE THIN FILMS | ASM MICROCHEMISTRY OY (FI) | 2001-04-19 | — | — | WO | disclosed |
| US-6110859-A | Hybrid catalyst system for converting hydrocarbons and a method of making and using such catalyst system | PHILLIPS PETROLEUM COMPANY (US) | 2000-08-29 | — | — | US | disclosed |
| US-6090992-A | COMPRISING ALUMINA, AT LEAST ONE CARBURIZED TRANSITION METAL, AND AT LEAST ONE HALOGEN COMPONENT. | PHILLIPS PETROLEUM COMPANY (US) | 2000-07-18 | — | — | US | disclosed |