⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL43362 | 0.79 | — | — | |
| SCHEMBL3271703 | 0.78 | — | — | |
| Alcohol SCHEMBL15153515 | 0.73 | — | — | |
| SCHEMBL29749367 | 0.65 | — | — | |
| SCHEMBL30384811 | 0.64 | — | — | |
| SCHEMBL1134199 | 0.61 | — | — | |
| SCHEMBL185754 | 0.58 | TSHR (0.43) | — | |
| SCHEMBL156986 | 0.58 | TSHR (0.43) | — | |
| SCHEMBL1253185 | 0.58 | TSHR (0.43) | — | |
| SCHEMBL2754272 | 0.58 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 100 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250277305-A1 | Selective Thin Film Deposition Method Using Area-Selective Atomic Layer Deposition Method, and Substrates Having Thin Films Selectively Formed Thereon | INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION (KR) | 2025-09-04 | — | — | US | claimed |
| CN-119096004-A | Method for the regioselective deposition of thin films using atomic layer deposition and substrate for selectively forming thin films | 仁川大学校产学协力团 | 2024-12-06 | — | — | CN | claimed |
| CN-117904602-A | Method for depositing conformal metal or metalloid silicon nitride films | 弗萨姆材料美国有限责任公司 | 2024-04-19 | — | — | CN | claimed |
| CN-117265512-A | Method for depositing conformal metal or metalloid silicon nitride films and resulting films | 弗萨姆材料美国有限责任公司 | 2023-12-22 | — | — | CN | claimed |
| EP-3663301-B1 | BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF BORON CONTAINING FILMS | VERSUM MAT US LLC (US) | 2023-08-30 | — | — | EP | claimed |
| US-11732351-B2 | Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films | VERSUM MATERIALS US, LLC (US) | 2023-08-22 | — | — | US | claimed |
| CN-116411261-A | Boron-containing compounds, compositions, and methods for depositing boron-containing films | 弗萨姆材料美国有限责任公司 | 2023-07-11 | — | — | CN | claimed |
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | claimed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | claimed |
| WO-2010132172-A2 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-11-18 | — | — | WO | claimed |
| US-20100062149-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-03-11 | — | — | US | claimed |
| US-20100062614-A1 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2010-03-11 | — | — | US | claimed |
| EP-1691400-B1 | Preparation of metal silicon nitride films via cyclic deposition | AIR PROD & CHEM (US) | 2009-01-14 | — | — | EP | claimed |
| US-20260098051-A1 | ORGANOAMINO-FUNCTIONALIZED CYCLIC OLIGOSILOXANES FOR DEPOSITION OF SILICON-CONTAINING FILMS | VERSUM MAT US LLC (US) | 2026-04-09 | — | — | US | disclosed |
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | disclosed |
| EP-4705539-A1 | AREA SELECTIVE DEPOSITION OF METAL FILM ON SILICON CONTAINING SURFACES UTILIZING ALCOHOLS | Versum Materials US, LLC (US) | 2026-03-11 | — | — | EP | disclosed |
| US-20100062149-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-03-11 | — | — | US | disclosed |
| US-20100062614-A1 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2010-03-11 | — | — | US | disclosed |
| WO-2010027669-A2 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-03-11 | — | — | WO | disclosed |
| US-20090142474-A1 | RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION | APPLIED MATERIALS, INC. | 2009-06-04 | — | — | US | disclosed |