⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Alcohol SCHEMBL15153515 | 0.93 | — | — | |
| SCHEMBL3270779 | 0.79 | — | — | |
| SCHEMBL30384811 | 0.67 | — | — | |
| SCHEMBL1134199 | 0.65 | — | — | |
| SCHEMBL31452835 | 0.65 | — | — | |
| SCHEMBL2754272 | 0.61 | — | — | |
| SCHEMBL6300049 | 0.61 | ABCB11 (0.30) | — | |
| SCHEMBL6612662 | 0.59 | — | — | |
| SCHEMBL30396258 | 0.57 | — | — | |
| SCHEMBL4373736 | 0.57 | ABCB11 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 882 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250277305-A1 | Selective Thin Film Deposition Method Using Area-Selective Atomic Layer Deposition Method, and Substrates Having Thin Films Selectively Formed Thereon | INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION (KR) | 2025-09-04 | — | — | US | claimed |
| US-12344932-B2 | Deposition of ceramic layers using liquid organometallic precursors | X-ENERGY, LLC (US) | 2025-07-01 | — | — | US | claimed |
| CN-120143333-A | Super-black nano coating structure | 深圳市原速光电科技有限公司 | 2025-06-13 | — | — | CN | claimed |
| US-12252452-B2 | Coatings on particles of high energy materials and methods of forming same | Forge Nano, Inc. (US) | 2025-03-18 | — | — | US | claimed |
| CN-119096004-A | Method for the regioselective deposition of thin films using atomic layer deposition and substrate for selectively forming thin films | 仁川大学校产学协力团 | 2024-12-06 | — | — | CN | claimed |
| CN-118891394-A | Deposition of ceramic layers using liquid organometallic precursors | 埃克斯能量有限责任公司 | 2024-11-01 | — | — | CN | claimed |
| CN-117265512-A | Method for depositing conformal metal or metalloid silicon nitride films and resulting films | 弗萨姆材料美国有限责任公司 | 2023-12-22 | — | — | CN | claimed |
| WO-2023204453-A1 | SELECTIVE THIN FILM DEPOSITION METHOD USING AREA-SELECTIVE ATOMIC LAYER DEPOSITION METHOD, AND SUBSTRATES HAVING THIN FILMS SELECTIVELY FORMED THEREON | 인천대학교 산학협력단 | 2023-10-26 | — | — | WO | claimed |
| CN-109690744-B | Method and apparatus for filling gaps | ASM IP控股有限公司 | 2023-09-22 | — | — | CN | claimed |
| US-20230295796-A1 | DEPOSITION OF CERAMIC LAYERS USING LIQUID ORGANOMETALLIC PRECURSORS | X-ENERGY | 2023-09-21 | — | — | US | claimed |
| US-6573150-B1 | Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors | APPLIED MATERIALS, INC. | 2003-06-03 | — | — | US | claimed |
| US-6569501-B2 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | ANGSTRON SYSTEMS, INC. | 2003-05-27 | — | — | US | claimed |
| US-20030082301-A1 | Enhanced copper growth with ultrathin barrier layer for high performance interconnects | APPLIED MATERIALS, INC. | 2003-05-01 | — | — | US | claimed |
| US-20030082307-A1 | Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application | APPLIED MATERIALS, INC. | 2003-05-01 | — | — | US | claimed |
| US-20020164421-A1 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | NOVELLUS SYSTEMS, INC. | 2002-11-07 | — | — | US | claimed |
| US-20020164423-A1 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | NOVELLUS SYSTEMS, INC. | 2002-11-07 | — | — | US | claimed |
| WO-2002081771-A2 | ATOMIC LAYER DEPOSITION SYSTEM AND METHOD | ANGSTRON SYSTEMS, INC. (US) | 2002-10-17 | — | — | WO | claimed |
| US-6428859-B1 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | ANGSTRON SYSTEMS, INC. | 2002-08-06 | — | — | US | claimed |
| US-6416822-B1 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | ANGSTROM SYSTEMS, INC. | 2002-07-09 | — | — | US | claimed |
| WO-2002031873-A1 | INTEGRATION OF CVD TANTALUM OXIDE WITH TITANIUM NITRIDE AND TANTALUM NITRIDE TO FORM MIM CAPACITORS | APPLIED MATERIALS, INC. (US) | 2002-04-18 | — | — | WO | claimed |