SCHEMBL328760

SCHEMBL328760

C[Si](C)(c1ccccc1)N(c1ccccc1)[SiH](c1ccccc1)c1ccccc1

nearest known ligand 0.31

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10664425 0.85 ESR1 (0.31) ESR1ESR2
SCHEMBL9358978 0.82 MEN1 (0.32)
SCHEMBL133920 0.80 NPSR1 (0.32)
SCHEMBL28307829 0.80 ESR1 (0.33) ESR1ESR2
SCHEMBL9684586 0.74
SCHEMBL2891505 0.73
SCHEMBL10664430 0.69 NPSR1 (0.30)
SCHEMBL26361047 0.69 KMT2A (0.39) ESR1ESR2
SCHEMBL3474013 0.68 ESR1 (0.33) ESR1ESR2
SCHEMBL766067 0.67 ESR1 (0.32) ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9293417-B2 Method for forming barrier film on wiring line TOKYO ELECTRON LIMITED (JP) 2016-03-22 US claimed
US-8709541-B2 Method for forming a film TOKYO ELECTRON LIMITED (JP) 2014-04-29 US claimed
US-20120251721-A1 DEVICE AND METHOD FOR FORMING FILM TOKYO ELECTRON LIMITED (JP) 2012-10-04 US claimed
US-20120114869-A1 FILM FORMING METHOD TOKYO ELECTRON LIMITED (JP) 2012-05-10 US claimed
CN-102395705-A Device and method for forming film TOKYO ELECTRON LTD 2012-03-28 CN claimed
US-7576413-B2 Packaged stacked semiconductor device and method for manufacturing the same KYUSHU INSTITUTE OF TECHNOLOGY (JP) 2009-08-18 US claimed
US-20080061402-A1 Packaged Stacked Semiconductor Device And Method For Manufacturing The Same INVENSAS LLC 2008-03-13 US claimed
US-7129187-B2 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED (JP) 2006-10-31 US claimed
WO-2006019438-A2 LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS TOKYO ELECTRON LIMITED (JP) 2006-02-23 WO claimed
US-20060014399-A1 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED 2006-01-19 US claimed
EP-0310320-B1 Curable composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1994-12-28 EP claimed
US-4923948-A Curable composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1990-05-08 US claimed
EP-0310320-A2 Curable composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1989-04-05 EP claimed
EP-3650416-B1 COATED GLASS PANE COMPRISING AN UNDERLAYER AND A SMOOTH LAYER BASED ON SILICA AND/OR ORGANO SILICA PILKINGTON GROUP LTD (GB) 2024-04-17 EP disclosed
US-20230197509-A1 WET FUNCTIONALIZATION OF DIELECTRIC SURFACES LAM RESEARCH CORPORATION 2023-06-22 US disclosed
CN-115769362-A Wet functionalization of dielectric surfaces 朗姆研究公司 2023-03-07 CN disclosed
US-4656300-A Process for a thermal treatment of a polysilazane containing .tbd.SiH groups and .tbd.Si--NH-- groups RHONE POULENC SPECIALITES CHIMIQUES (FR) 1987-04-07 US disclosed
EP-0208630-A1 Process for treating a polysilazane having at least two =/- SiH groups with a cationic catalyst RHONE-POULENC CHIMIE (FR) 1987-01-14 EP disclosed
EP-0202176-A1 Process for treating polyorganosilazanes and/or polyorgano(disilyl)silazanes with a catalyst comprising a mineral ionic salt and a complexing agent RHONE-POULENC CHIMIE (FR) 1986-11-20 EP disclosed
EP-0197863-A1 Process for preparing organosilazanes and organopoly(disilyl)silazanes with an enhanced heat stability, and their use in preparing ceramic materials RHONE-POULENC CHIMIE (FR) 1986-10-15 EP disclosed