⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5416259 | 0.82 | — | — | |
| SCHEMBL5410472 | 0.79 | — | — | |
| SCHEMBL8019350 | 0.78 | — | — | |
| SCHEMBL12898577 | 0.78 | — | — | |
| SCHEMBL5417945 | 0.74 | — | — | |
| SCHEMBL8015381 | 0.74 | LMNA (0.34) | — | |
| SCHEMBL13089510 | 0.74 | — | — | |
| SCHEMBL22551427 | 0.74 | — | — | |
| SCHEMBL12898467 | 0.73 | — | — | |
| SCHEMBL13300454 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9698077-B2 | Heat conductive silicone composition based on combination of components, heat conductive layer, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-04 | — | — | US | disclosed |
| US-8097745-B2 | Method of producing organosilicon compound | JSR CORPORATION (JP) | 2012-01-17 | — | — | US | disclosed |
| US-20110082309-A1 | METHOD OF PRODUCING ORGANOSILICON COMPOUND | JSR CORPORATION (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| EP-2264219-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND PROCESS FOR PRODUCTION THEREOF | JSR Corporation (JP) | 2010-12-22 | — | — | EP | disclosed |
| US-20100261925-A1 | METHOD FOR PRODUCING SILICON COMPOUND | JSR CORPORATION (JP) | 2010-10-14 | — | — | US | disclosed |
| US-20100261925-A1 | METHOD FOR PRODUCING SILICON COMPOUND | JSR CORPORATION (JP) | 2010-10-14 | — | — | US | disclosed |
| US-20100174103-A1 | MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR CORPORATION (JP) | 2010-07-08 | — | — | US | disclosed |
| US-20100174103-A1 | MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR CORPORATION (JP) | 2010-07-08 | — | — | US | disclosed |
| US-20100140754-A1 | FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR CORPORATION (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100140754-A1 | FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR CORPORATION (JP) | 2010-06-10 | — | — | US | disclosed |
| EP-2123658-A1 | MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR Corporation (JP) | 2009-11-25 | — | — | EP | disclosed |
| EP-2053107-A1 | FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME | JSR Corporation (JP) | 2009-04-29 | — | — | EP | disclosed |