SCHEMBL332696

SCHEMBL332696

CCO[Si](C)(C[Si](C)(OCC)OCC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3623774 0.87
SCHEMBL977222 0.84
SCHEMBL12458696 0.84
SCHEMBL13089274 0.82
SCHEMBL13089407 0.82
SCHEMBL13089377 0.82
SCHEMBL12898440 0.80
SCHEMBL12898532 0.80
SCHEMBL7135810 0.80
SCHEMBL15105104 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 413 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250304819-A1 Flexible and foldable abrasion resistant photopatternable siloxane hard coat OPTITUNE OY (FI) 2025-10-02 US claimed
US-20250253145-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-08-07 US claimed
EP-3663301-B1 BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF BORON CONTAINING FILMS VERSUM MAT US LLC (US) 2023-08-30 EP claimed
US-11634610-B2 Siloxane polymer compositions and their use OPTITUNE OY (FI) 2023-04-25 US claimed
US-20220010172-A1 SILOXANE POLYMER COMPOSITIONS AND THEIR USE OPTITUNE OY (FI) 2022-01-13 US claimed
US-11127864-B2 Carbosiloxane polymer compositions, methods of producing the same and the use thereof OPTITUNE OY (FI) 2021-09-21 US claimed
CN-107636852-B Method for depositing porous organosilicate glass films for use as resistive random access memories 弗萨姆材料美国有限责任公司 2021-06-25 CN claimed
US-10985013-B2 Method and precursors for manufacturing 3D devices VERSUM MATERIALS US, LLC (US) 2021-04-20 US claimed
US-20210087429-A1 Flexible and foldable abrasion resistant photopatternable siloxane hard coat OPTITUNE OY (FI) 2021-03-25 US claimed
EP-3775075-A1 FLEXIBLE AND FOLDABLE ABRASION RESISTANT PHOTOPATTERNABLE SILOXANE HARD COAT Optitune Oy (FI) 2021-02-17 EP claimed
EP-2618364-A2 Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-07-24 EP claimed
US-20130180215-A1 CATALYST AND FORMULATIONS COMPRISING SAME FOR ALKOXYSILANES HYDROLYSIS REACTION IN SEMICONDUCTOR PROCESS AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-07-18 US claimed
US-20130175680-A1 DIELECTRIC MATERIAL WITH HIGH MECHANICAL STRENGTH INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-07-11 US claimed
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US claimed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US claimed
US-7500397-B2 Activated chemical process for enhancing material properties of dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-03-10 US claimed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US claimed
US-20080199977-A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-21 US claimed
EP-1959485-A2 Activated chemical process for enhancing material properties of dielectric films Air Products and Chemicals, Inc. (US) 2008-08-20 EP claimed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US claimed