SCHEMBL3338971

SCHEMBL3338971

C=CC(=O)OCCC[SiH](C)OCC

nearest known ligand 0.58

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.58
HPGD P15428 1/20 0.58
ALDH1A1 P00352 5/20 0.53
CYP3A4 P08684 2/20 0.53
TP53 P04637 3/20 0.44
HIF1A Q16665 3/20 0.44
HSD17B10 Q99714 1/20 0.44
THRB P10828 2/20 0.41
ATM Q13315 1/20 0.39
HCAR2 Q8TDS4 4/20 0.35
MAPK1 P28482 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
MAPT P10636 2/20 0.31
RAB9A P51151 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30767211 0.94 TSHR (0.59) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL5164925 0.85 TSHR (0.59) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL81412 0.85 TSHR (0.59) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL28874767 0.83 TSHR (0.58) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL7525910 0.83 TSHR (0.57) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL1741816 0.83 TSHR (0.57) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL28810780 0.82 ATM (0.46) TSHRHPGDALDH1A1CYP3A4ATM
SCHEMBL28175772 0.82 TSHR (0.56) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL25262634 0.81 TSHR (0.55) TSHRHPGDALDH1A1CYP3A4TP53
SCHEMBL1585542 0.80 TSHR (0.63) TSHRHPGDALDH1A1CYP3A4TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed