SCHEMBL3340344

SCHEMBL3340344

CO[SiH](CC(C)OC(C)=O)OC

nearest known ligand 0.47

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.47
CHRM2 P08172 1/20 0.47
CHRM4 P08173 1/20 0.47
CHRM1 P11229 1/20 0.47
TBXA2R P21731 1/20 0.47
GALR3 O60755 1/20 0.45
MAPT P10636 1/20 0.45
BLM P54132 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
ALOX15 P16050 1/20 0.34
ALDH1A1 P00352 1/20 0.32
TRPV1 Q8NER1 1/20 0.32
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4005979 0.80 TSHR (0.41) TSHRALDH1A1
SCHEMBL3341334 0.79 TSHR (0.44) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10958863 0.79 TSHR (0.44) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL11629214 0.76 TSHR (0.41) TSHRALDH1A1
SCHEMBL523506 0.76 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL963721 0.75 TSHR (0.34) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL5478726 0.73 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL17486681 0.73 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10331178 0.71 TSHR (0.58) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10793944 0.71 TSHR (0.58) TSHRCHRM2CHRM4CHRM1TBXA2R

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed