SCHEMBL3342222

SCHEMBL3342222

CCC(C)(C)OC(=O)NCCNC(=O)OC(C)(C)CC

nearest known ligand 0.46

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.46
MEN1 O00255 1/20 0.43
GAA P10253 1/20 0.43
KMT2A Q03164 1/20 0.43
EPHX1 P07099 2/20 0.41
MAOA P21397 1/20 0.40
MAOB P27338 1/20 0.40
ACHE P22303 8/20 0.38
CA12 O43570 2/20 0.38
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
CA9 Q16790 2/20 0.38
MALT1 Q9UDY8 1/20 0.36
ALDH1A1 P00352 1/20 0.35
TSHR P16473 1/20 0.35
HTT P42858 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12885086 0.94 TDP1 (0.55) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL22151602 0.92 TDP1 (0.41) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL22678434 0.91 TDP1 (0.43) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL1852564 0.90 TDP1 (0.59) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL1851058 0.90 TDP1 (0.59) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL1851030 0.90 TDP1 (0.59) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL1850304 0.90 TDP1 (0.59) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL1849286 0.90 TDP1 (0.59) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL9893642 0.90 TDP1 (0.59) TDP1MEN1GAAKMT2AEPHX1
SCHEMBL24340764 0.89 TDP1 (0.50) TDP1MEN1GAAKMT2AEPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8658346-B2 Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-25 US disclosed
US-8658346-B2 Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-25 US disclosed
US-8426105-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US disclosed
US-8426105-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-23 US disclosed
US-8367310-B2 Pattern forming process and resist-modifying composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-05 US disclosed
US-8329384-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-11 US disclosed
US-8329384-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-11 US disclosed
US-20110033799-A1 PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20110033799-A1 PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20100297563-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed
US-20100297554-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed
US-20100297554-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed
US-20100297563-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed
US-20100209849-A1 PATTERN FORMING PROCESS AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-19 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed