SCHEMBL1850304

SCHEMBL1850304

CCC(C)(C)OC(=O)NCCCCCCCCCNC(=O)OC(C)(C)CC

nearest known ligand 0.59

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.59
EPHX1 P07099 3/20 0.52
MAOA P21397 1/20 0.51
MAOB P27338 1/20 0.51
CA12 O43570 2/20 0.47
CA1 P00915 2/20 0.47
CA2 P00918 2/20 0.47
CA9 Q16790 2/20 0.47
MEN1 O00255 1/20 0.47
GAA P10253 1/20 0.47
KMT2A Q03164 1/20 0.47
ACHE P22303 7/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1851058 1.00 TDP1 (0.59) TDP1EPHX1MAOAMAOBCA12
SCHEMBL1852564 1.00 TDP1 (0.59) TDP1EPHX1MAOAMAOBCA12
SCHEMBL1851030 1.00 TDP1 (0.59) TDP1EPHX1MAOAMAOBCA12
SCHEMBL1849286 1.00 TDP1 (0.59) TDP1EPHX1MAOAMAOBCA12
SCHEMBL9893642 1.00 TDP1 (0.59) TDP1EPHX1MAOAMAOBCA12
SCHEMBL879527 0.94 EPHX1 (0.61) TDP1EPHX1MAOAMAOBACHE
SCHEMBL10282831 0.94 EPHX1 (0.61) TDP1EPHX1MAOAMAOBACHE
SCHEMBL2722793 0.91 TDP1 (0.51) TDP1EPHX1MAOAMAOBCA12
SCHEMBL15613928 0.90 ADRA1A (0.51) TDP1EPHX1MAOAMAOBMEN1
SCHEMBL3342222 0.90 TDP1 (0.46) TDP1EPHX1MAOAMAOBCA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9323146-B2 Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base JSR CORPORATION (JP) 2016-04-26 US disclosed
US-9304393-B2 Radiation-sensitive resin composition and compound JSR CORPORATION (JP) 2016-04-05 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20140255854-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-11 US disclosed
US-8697335-B2 Radiation-sensitive resin composition and compound JSR CORPORATION (JP) 2014-04-15 US disclosed
US-20140023968-A1 RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM JSR CORPORATION (JP) 2014-01-23 US disclosed
US-20130288179-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2013-10-31 US disclosed
US-20130216951-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2013-08-22 US disclosed
EP-2623558-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR Corporation (JP) 2013-08-07 EP disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-14 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-20110223537-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-09-15 US disclosed
EP-2325695-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2011-05-25 EP disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND RAD1, RER1, RPA1 TDP1 824/4885EPHX1 508/4885MAOA 3771/4885
US-20140363769-A1 PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE FRG1, FGFR1, IGF1R TDP1 2164/4885EPHX1 3232/4885MAOA 1374/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.