Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GRIN2D | O15399 | 1/20 | 0.30 |
| ▸ | GRIN3B | O60391 | 1/20 | 0.30 |
| ▸ | GRIN1 | Q05586 | 1/20 | 0.30 |
| ▸ | GRIN2A | Q12879 | 1/20 | 0.30 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.30 |
| ▸ | GRIN2C | Q14957 | 1/20 | 0.30 |
| ▸ | GRIN3A | Q8TCU5 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5429152 | 0.86 | — | — | |
| SCHEMBL23403823 | 0.75 | PGR (0.39) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL7173883 | 0.75 | SMN1; SMN2 (0.34) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL9655714 | 0.73 | PGR (0.34) | — | |
| SCHEMBL2962190 | 0.73 | KMT2A (0.32) | — | |
| SCHEMBL27669772 | 0.73 | CCNC (0.31) | — | |
| SCHEMBL2969375 | 0.73 | PGR (0.31) | — | |
| SCHEMBL27763269 | 0.73 | PGR (0.38) | — | |
| SCHEMBL11353997 | 0.71 | PGR (0.37) | — | |
| SCHEMBL3341713 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | disclosed |
| US-9032906-B2 | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS, INC. (US) | 2015-05-19 | — | — | US | disclosed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-8491967-B2 | In-situ chamber treatment and deposition process | APPLIED MATERIALS, INC. (US) | 2013-07-23 | — | — | US | disclosed |
| CN-101448977-B | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS INC | 2010-12-15 | — | — | CN | disclosed |
| US-7850779-B2 | Apparatus and process for plasma-enhanced atomic layer deposition | Applied Materisals, Inc. (US) | 2010-12-14 | — | — | US | disclosed |
| WO-2010132172-A2 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-11-18 | — | — | WO | disclosed |
| US-7682946-B2 | flowing a process gas through a conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, pulsing a organoruthanium precursor into the process gas and igniting a plasma of ammonia, N2, H2 from the process gas to deposit a material on the substrate (Ru, Ta, W ) | APPLIED MATERIALS, INC. (US) | 2010-03-23 | — | — | US | disclosed |
| US-20100062149-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-03-11 | — | — | US | disclosed |
| US-20100062614-A1 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2010-03-11 | — | — | US | disclosed |
| WO-2010027669-A2 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-03-11 | — | — | WO | disclosed |
| CN-101448977-A | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS INC (US) | 2009-06-03 | — | — | CN | disclosed |
| US-20080268171-A1 | Plasma baffle assembly for receiving process gas within plasma-enhanced vapor deposition chamber | APPLIED MATERIALS, INC. | 2008-10-30 | — | — | US | disclosed |
| WO-2007142690-A2 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. (US) | 2007-12-13 | — | — | WO | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128863-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128862-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | disclosed |