⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4151530 | 0.97 | — | — | |
| SCHEMBL297696 | 0.82 | — | — | |
| SCHEMBL5370727 | 0.82 | — | — | |
| SCHEMBL13041912 | 0.79 | — | — | |
| SCHEMBL19469315 | 0.79 | — | — | |
| SCHEMBL4734725 | 0.79 | — | — | |
| SCHEMBL13933658 | 0.78 | — | — | |
| SCHEMBL4269822 | 0.78 | — | — | |
| SCHEMBL17407625 | 0.78 | — | — | |
| SCHEMBL31181952 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 373 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4735933-A2 | SURFACE ACTIVATED CHEMICAL VAPOR DEPOSITION AND USES THEREOF | Gvd Corporation (US) | 2026-05-06 | — | — | EP | claimed |
| US-12479867-B2 | Processes for synthesizing unsymmetrical disiloxanes | DOW SILICONES CORPORATION (US) | 2025-11-25 | — | — | US | claimed |
| US-12331164-B2 | Curable siloxane resin composition | KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2025-06-17 | — | — | US | claimed |
| WO-2025106343-A1 | ETCHING METHODS | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2025-05-22 | — | — | WO | claimed |
| US-20250157825-A1 | ETCHING METHODS | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. | 2025-05-15 | — | — | US | claimed |
| CN-117844023-B | High-temperature-resistant protective film and production process thereof | 惠州市贝斯特膜业有限公司 | 2025-01-28 | — | — | CN | claimed |
| WO-2025007115-A2 | SURFACE ACTIVATED CHEMICAL VAPOR DEPOSITION AND USES THEREOF | GVD CORPORATION (US) | 2025-01-02 | — | — | WO | claimed |
| US-20240336741-A1 | SILICONE COMPOSITION FOR LOW-TEMPERATURE APPLICATIONS | VENTURI LAB SA (CH) | 2024-10-10 | — | — | US | claimed |
| EP-4442731-A1 | SILICONE COMPOSITION FOR LOW-TEMPERATURE APPLICATIONS | Venturi Lab SA (CH) | 2024-10-09 | — | — | EP | claimed |
| CN-117412475-B | Protective film for combining soft and hard plates | 惠州市贝斯特膜业有限公司 | 2024-08-06 | — | — | CN | claimed |
| WO-2010034004-A1 | SYSTEMS, APPARATUS AND METHODS FOR COATING THE INTERIOR OF A CONTAINER USING A PHOTOLYSIS AND/OR THERMAL CHEMICAL VAPOR DEPOSITION PROCESS | BECTON, DICKINSON AND COMPANY (US) | 2010-03-25 | — | — | WO | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-7491658-B2 | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-02-17 | — | — | US | claimed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | claimed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | claimed |
| EP-1716269-A2 | PROCESS FOR PRODUCING SIO2-CONTAINING INSULATING LAYERS ON CHIPS | Degussa GmbH (DE) | 2006-11-02 | — | — | EP | claimed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | claimed |
| US-20060079099-A1 | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-04-13 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |
| WO-2005080629-A2 | SILICON COMPOUNDS FOR PRODUCING SiO2-CONTAINING INSULATING LAYERS ON CHIPS | DEGUSSA AG (DE) | 2005-09-01 | — | — | WO | claimed |