SCHEMBL335634

SCHEMBL335634

C=CC[Si](C)(C)O[SiH](C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL297696 0.89
SCHEMBL18145549 0.82
SCHEMBL8845955 0.82
SCHEMBL6896108 0.80
SCHEMBL16477649 0.77
SCHEMBL2048012 0.77
SCHEMBL25331980 0.76 TSHR (0.31)
SCHEMBL5701576 0.73
SCHEMBL295866 0.73
SCHEMBL23499898 0.72 TSHR (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 122 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12331164-B2 Curable siloxane resin composition KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2025-06-17 US claimed
WO-2025106343-A1 ETCHING METHODS FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-05-22 WO claimed
US-20250157825-A1 ETCHING METHODS FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2025-05-15 US claimed
US-20240258111-A1 Surface Treatment Compositions and Methods FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. 2024-08-01 US claimed
US-20230078587-A1 CURABLE SILOXANE RESIN COMPOSITION KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2023-03-16 US claimed
CN-115109302-A Micro-foaming material for internal injection molding of automobile plastic part and preparation method thereof 江苏永成汽车零部件股份有限公司 2022-09-27 CN claimed
US-11447642-B2 Methods of using surface treatment compositions FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2022-09-20 US claimed
CN-112920351-B Hybrid sewage treatment flocculant and preparation method thereof 山东格瑞水务有限公司 2021-12-07 CN claimed
US-11174394-B2 Surface treatment compositions and articles containing same FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2021-11-16 US claimed
EP-3830196-A1 SURFACE TREATMENT COMPOSITIONS AND METHODS FUJIFILM Electronic Materials U.S.A, Inc. (US) 2021-06-09 EP claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed