SCHEMBL335741

SCHEMBL335741

C=CC(C=C)[Si](C)(C)O[Si](C)(c1ccccc1)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.33
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL433139 0.76 ESR1 (0.42) MAPTESR1ESR2
SCHEMBL5377950 0.76 ESR1 (0.33) MAPTESR1ESR2
SCHEMBL2369735 0.76 ESR1 (0.33) MAPTESR1ESR2
SCHEMBL1538674 0.74 ESR1 (0.34) MAPTESR1ESR2
SCHEMBL1538833 0.74 ESR1 (0.34) MAPTESR1ESR2
SCHEMBL8018745 0.73 ESR1 (0.37) ESR1ESR2
SCHEMBL11889758 0.72 ESR1 (0.33) MAPTESR1ESR2KMT2A
SCHEMBL810787 0.72 ESR1 (0.39) MAPTESR1ESR2
SCHEMBL13621383 0.72 ESR1 (0.39) MAPTESR1ESR2
SCHEMBL13621386 0.72 ESR1 (0.39) MAPTESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US claimed
US-20140050860-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-02-20 US disclosed
US-8618183-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-12-31 US disclosed
US-20120328796-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-12-27 US disclosed
US-8268411-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-18 US disclosed
US-8097932-B2 Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-01-17 US disclosed
US-7674521-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-03-09 US disclosed
US-20090297729-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-12-03 US disclosed
US-20090146265-A1 ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-11 US disclosed
US-7491658-B2 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-02-17 US disclosed
US-20070196639-A1 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-08-23 US disclosed
CN-1941359-A Porous composite material and method for making same IBM (US) 2007-04-04 CN disclosed
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US disclosed