SCHEMBL336315

SCHEMBL336315

CCC#CO[Si](C)(C)C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4469415 0.82
SCHEMBL9756840 0.79
SCHEMBL10961080 0.79 TSHR (0.30)
SCHEMBL5613275 0.77
SCHEMBL6425877 0.77 PTPN7 (0.32)
SCHEMBL29019931 0.74
SCHEMBL2063930 0.74
SCHEMBL3381957 0.72
SCHEMBL8667989 0.72
SCHEMBL8668976 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US claimed
US-20140050860-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-02-20 US disclosed
US-8618183-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-12-31 US disclosed
US-20120328796-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-12-27 US disclosed
US-8268411-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-18 US disclosed
US-8097932-B2 Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-01-17 US disclosed
US-7674521-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-03-09 US disclosed
US-20090297729-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-12-03 US disclosed
US-20090146265-A1 ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-11 US disclosed
US-7491658-B2 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-02-17 US disclosed
US-20070196639-A1 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-08-23 US disclosed
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US disclosed
EP-0948327-A4 ANTIDIABETIC AGENTS MERCK & CO INC (US) 2003-04-02 EP disclosed
EP-0948327-A1 ANTIDIABETIC AGENTS Merck & Co., Inc. (US) 1999-10-13 EP disclosed
WO-1998027974-A1 ANTIDIABETIC AGENTS MERCK & CO., INC. (US) 1998-07-02 WO disclosed
EP-0225739-A2 2-2-Dimethyl-3-hydroxy-3-propargyl-4-(1,2,4-triazole-1-yl -butane derivatives as plant growth regulators IMPERIAL CHEMICAL INDUSTRIES PLC (GB) 1987-06-16 EP disclosed