SCHEMBL3364488

SCHEMBL3364488

CCC(C)OC(=O)C1C2C=CC(C2)C1C(=O)OC(C)CC

nearest known ligand 0.44

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.44
ALDH1A1 P00352 4/20 0.41
SMN1; SMN2 Q16637 3/20 0.41
HTT P42858 1/20 0.38
LMNA P02545 1/20 0.35
RAB9A P51151 2/20 0.33
NPC1 O15118 1/20 0.33
TSHR P16473 1/20 0.33
EPHX2 P34913 1/20 0.33
MAPT P10636 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11322741 0.86 ALDH1A1 (0.35) POLBALDH1A1SMN1; SMN2HTTLMNA
SCHEMBL2139733 0.81 ALDH1A1 (0.38) POLBALDH1A1SMN1; SMN2HTTLMNA
SCHEMBL24037757 0.81 SMN1; SMN2 (0.43) POLBALDH1A1SMN1; SMN2HTT
SCHEMBL102611 0.81 SMN1; SMN2 (0.43) POLBALDH1A1SMN1; SMN2HTT
SCHEMBL3368002 0.79 POLB (0.42) POLBALDH1A1SMN1; SMN2HTTLMNA
SCHEMBL951662 0.77 ALDH1A1 (0.51) POLBALDH1A1LMNARAB9AEPHX2
SCHEMBL1356889 0.76 ALDH1A1 (0.38) POLBALDH1A1SMN1; SMN2HTTLMNA
SCHEMBL10072300 0.75 SMN1; SMN2 (0.42) POLBALDH1A1SMN1; SMN2HTT
SCHEMBL3363662 0.75 POLB (0.51) POLBALDH1A1SMN1; SMN2LMNARAB9A
SCHEMBL5836551 0.75 POLB (0.51) POLBALDH1A1SMN1; SMN2LMNARAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1164434-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-10-06 EP disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-6964840-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-15 US disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-20040241580-A1 Radiation-sensitive resin composition NISHIMURA YUKIO (JP) 2004-12-02 US disclosed
US-6800414-B2 FLUOROPOLYMER JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6753124-B2 AMPLIFIED POSITIVE PHOTORESISTS JSR CORPORATION (JP) 2004-06-22 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20020009667-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
EP-1162506-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-12 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed