SCHEMBL338098

SCHEMBL338098

[GeH4].[TeH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15569062 0.82
SCHEMBL2459876 0.82
Arsenic SCHEMBL12802761 0.82
Water SCHEMBL22228991 0.82
SCHEMBL22409542 0.82
SCHEMBL12802875 0.82
SCHEMBL9996142 0.82
SCHEMBL1205212 0.82
SCHEMBL21380724 0.82
SCHEMBL15208457 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 529 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12501628-B2 Memory comprising conductive ferroelectric material in series with dielectric material INTEL CORPORATION (US) 2025-12-16 US claimed
US-20250359072-A1 PHASE-CHANGE DEVICE STRUCTURE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
CN-119758491-A Reconfigurable super-surface device, preparation method thereof and phase compensation method 启元实验室 2025-04-04 CN claimed
CN-115696011-B Phase change material-based electrically controllable color filter array and artificial vision system 华中科技大学 2024-05-14 CN claimed
CN-117542601-B High-toughness high-cerium-content neodymium-iron-boron magnet and preparation method thereof 宁波中杭实业有限公司 2024-04-23 CN claimed
US-20240057346-A1 PHASE-CHANGE DEVICE STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-02-15 US claimed
CN-117542601-A High-toughness high-cerium-content neodymium-iron-boron magnet and preparation method thereof 宁波中杭实业有限公司 2024-02-09 CN claimed
CN-117202768-A Phase change device structure and forming method thereof 台湾积体电路制造股份有限公司 2023-12-08 CN claimed
CN-117154412-A Double-layer programmable wave-front regulating and controlling super surface based on phase change material and preparation method thereof 中国科学院物理研究所 2023-12-01 CN claimed
CN-116626992-A Phase-change color photoresist and preparation method of pixelated color filter thereof 华中科技大学 2023-08-22 CN claimed
CN-101110237-A Optical information storage medium PRODISC TECHNOLOGY INC (CN) 2008-01-23 CN claimed
CN-1299330-C Sulfide semiconductor mask for photoetching SHANGHAI INST OPTICS & FINE ME (CN) 2007-02-07 CN claimed
CN-1647209-A Multiple data state memory cell MICRON TECHNOLOGY INC (US) 2005-07-27 CN claimed
CN-1624873-A Sulfide semiconductor mask for photoetching SHANGHAI INST OPTICS & FINE ME (CN) 2005-06-08 CN claimed
CN-1515021-A Gas discharge lamp 皇家菲利浦电子有限公司 2004-07-21 CN claimed
CN-1355768-A Energy-activated compositions for controlled sustained release of gases SOUTHWEST RES INST (US) 2002-06-26 CN claimed
US-6165687-A Standard array, programmable image forming process EASTMAN KODAK COMPANY (US) 2000-12-26 US claimed
CN-2387550-Y Infrared filter SHANGHAI INST OF TECH PHYSICS (CN) 2000-07-12 CN claimed
EP-0197531-B1 THIN FILM TRANSISTOR FORMED ON INSULATING SUBSTRATE HITACHI, LTD. (JP) 1993-07-28 EP claimed
US-4203123-A Thin film memory device employing amorphous semiconductor materials BURROUGHS CORPORATION (US) 1980-05-13 US claimed