SCHEMBL9996142

SCHEMBL9996142

[BiH3].[GeH4].[TeH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28120973 0.87
SCHEMBL27937523 0.82
SCHEMBL18816542 0.82
SCHEMBL16338400 0.82
SCHEMBL1226383 0.82
SCHEMBL28181455 0.82
SCHEMBL338098 0.82
SCHEMBL28840973 0.82
SCHEMBL131182 0.82
SCHEMBL23002835 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116247119-B Room temperature topological insulator heterojunction photoelectric detector of special dipole antenna 中国科学院上海技术物理研究所 2025-06-13 CN claimed
CN-118472776-A Preparation method of germanium bismuth tellurium saturable absorber device and optical fiber laser 广东工业大学 2024-08-09 CN claimed
CN-115072671-B Germanium bismuth tellurium-based thermoelectric material and preparation method thereof 中国科学院宁波材料技术与工程研究所 2024-02-06 CN claimed
CN-116746295-A Phase change memory and method of manufacturing the same 华为技术有限公司 2023-09-12 CN claimed
CN-116247119-A Room temperature topological insulator heterojunction photoelectric detector of special dipole antenna 中国科学院上海技术物理研究所 2023-06-09 CN claimed
WO-2022241637-A1 PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREFOR 华为技术有限公司 2022-11-24 WO claimed
CN-115072671-A Germanium bismuth tellurium based thermoelectric material and preparation method thereof 中国科学院宁波材料技术与工程研究所 2022-09-20 CN claimed
EP-2698373-B1 Precursors for gst films in ald/cvd processes VERSUM MAT US LLC (US) 2018-09-19 EP claimed
CN-101383397-B Phase change memory element and manufacturing method thereof IND TECH RES INST 2010-06-02 CN claimed
CN-101383397-A Phase change memory element and manufacturing method thereof IND TECH RES INST (CN) 2009-03-11 CN claimed
CN-116247119-B Room temperature topological insulator heterojunction photoelectric detector of special dipole antenna 中国科学院上海技术物理研究所 2025-06-13 CN disclosed
CN-116247119-B Room temperature topological insulator heterojunction photoelectric detector of special dipole antenna 中国科学院上海技术物理研究所 2025-06-13 CN disclosed
CN-119764802-A Topological insulator zirconium telluride-graphene-based vertical heterojunction rectifying antenna and preparation method thereof 中国科学院上海技术物理研究所 2025-04-04 CN disclosed
CN-118472776-A Preparation method of germanium bismuth tellurium saturable absorber device and optical fiber laser 广东工业大学 2024-08-09 CN disclosed
CN-118472776-A Preparation method of germanium bismuth tellurium saturable absorber device and optical fiber laser 广东工业大学 2024-08-09 CN disclosed
US-20110300685-A1 METHODS FOR FABRICATING PHASE CHANGE MEMORY DEVICES SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-12-08 US disclosed
CN-101383397-B Phase change memory element and manufacturing method thereof IND TECH RES INST 2010-06-02 CN disclosed
CN-101383397-A Phase change memory element and manufacturing method thereof IND TECH RES INST (CN) 2009-03-11 CN disclosed
CN-100383861-C Optical memory HONGFUJIN PREC IND SHENZHEN (CN) 2008-04-23 CN disclosed
CN-1746984-A Optical storage HONGFUJIN PREC IND (CN) 2006-03-15 CN disclosed