⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28751739 | 0.89 | — | — | |
| SCHEMBL3344673 | 0.89 | — | — | |
| SCHEMBL560997 | 0.87 | — | — | |
| SCHEMBL15390443 | 0.87 | — | — | |
| SCHEMBL17184575 | 0.87 | — | — | |
| SCHEMBL29260478 | 0.75 | — | — | |
| SCHEMBL338560 | 0.75 | — | — | |
| SCHEMBL21773548 | 0.75 | — | — | |
| SCHEMBL21773550 | 0.75 | — | — | |
| SCHEMBL28090957 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 348 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250359072-A1 | PHASE-CHANGE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| CN-119767682-A | Semiconductor structure and manufacturing method thereof | 北京大学 | 2025-04-04 | — | — | CN | claimed |
| CN-119730252-A | Preparation method of self-selection memory integrated with CMOS | 北京大学 | 2025-03-28 | — | — | CN | claimed |
| CN-119384214-A | Self-selection memory based on 1S1R structure and preparation method and equipment thereof | 北京大学 | 2025-01-28 | — | — | CN | claimed |
| CN-119300704-A | Novel memory unit and preparation method and application thereof | 北京大学 | 2025-01-10 | — | — | CN | claimed |
| US-11968913-B2 | Integration of selector on confined phase change memory | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2024-04-23 | — | — | US | claimed |
| US-20240057346-A1 | PHASE-CHANGE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-15 | — | — | US | claimed |
| CN-117202768-A | Phase change device structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-12-08 | — | — | CN | claimed |
| CN-116746295-A | Phase change memory and method of manufacturing the same | 华为技术有限公司 | 2023-09-12 | — | — | CN | claimed |
| CN-113724757-B | Optical fiber memristor unit | 哈尔滨工程大学 | 2023-07-14 | — | — | CN | claimed |
| CN-100386882-C | Nonvolatile memory and operating method thereof | MACRONIX INT CO LTD (CN) | 2008-05-07 | — | — | CN | claimed |
| CN-100372001-C | Recording medium having super-resolution near-field structure and method and apparatus for reproducing the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2008-02-27 | — | — | CN | claimed |
| CN-101110237-A | Optical information storage medium | PRODISC TECHNOLOGY INC (CN) | 2008-01-23 | — | — | CN | claimed |
| CN-1299330-C | Sulfide semiconductor mask for photoetching | SHANGHAI INST OPTICS & FINE ME (CN) | 2007-02-07 | — | — | CN | claimed |
| CN-1273975-C | Super-resolution near-field structure optical disk | SHANGHAI INST OPTICS & FINE ME (CN) | 2006-09-06 | — | — | CN | claimed |
| CN-1270310-C | Super-resolution structure containing nonlinear mask layer | SHANGHAI INST OF OPTICS AND & (CN) | 2006-08-16 | — | — | CN | claimed |
| CN-1768379-A | Recording medium and reproducting method and equipment with super-resolution near-field structure | SAMSUNG ELECTRONICS CO LTD (KR) | 2006-05-03 | — | — | CN | claimed |
| CN-1624873-A | Sulfide semiconductor mask for photoetching | SHANGHAI INST OPTICS & FINE ME (CN) | 2005-06-08 | — | — | CN | claimed |
| CN-1588543-A | Super-resolution near-field structure optical disk | SHANGHAI INST OPTICS & FINE ME (CN) | 2005-03-02 | — | — | CN | claimed |
| CN-1564252-A | Super-resolution structure containing nonlinear mask layer | SHANGHAI INST OPTICS & FINE ME (CN) | 2005-01-12 | — | — | CN | claimed |