SCHEMBL338560

SCHEMBL338560

[Ag].[InH3].[SbH3].[TeH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17184575 0.87
SCHEMBL15390446 0.87
SCHEMBL560999 0.87
SCHEMBL28090957 0.75
SCHEMBL338558 0.75
SCHEMBL3744145 0.75
SCHEMBL6092959 0.75
SCHEMBL1834294 0.75
SCHEMBL687070 0.71
SCHEMBL4830833 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 320 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250359072-A1 PHASE-CHANGE DEVICE STRUCTURE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-11968913-B2 Integration of selector on confined phase change memory INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2024-04-23 US claimed
US-20240057346-A1 PHASE-CHANGE DEVICE STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-02-15 US claimed
CN-117202768-A Phase change device structure and forming method thereof 台湾积体电路制造股份有限公司 2023-12-08 CN claimed
CN-116746295-A Phase change memory and method of manufacturing the same 华为技术有限公司 2023-09-12 CN claimed
CN-113724759-B Optical fiber memristor unit based on evanescent field 哈尔滨工程大学 2023-07-14 CN claimed
CN-113724757-B Optical fiber memristor unit 哈尔滨工程大学 2023-07-14 CN claimed
CN-113724758-B Multicore fiber memristor device and scheme of erasing, writing and reading 哈尔滨工程大学 2023-07-14 CN claimed
CN-112563416-B Low-current long-life memristor comprising double buffer layers and preparation method thereof 东北师范大学 2023-03-24 CN claimed
WO-2022241637-A1 PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREFOR 华为技术有限公司 2022-11-24 WO claimed
CN-100386882-C Nonvolatile memory and operating method thereof MACRONIX INT CO LTD (CN) 2008-05-07 CN claimed
CN-100372001-C Recording medium having super-resolution near-field structure and method and apparatus for reproducing the same SAMSUNG ELECTRONICS CO LTD (KR) 2008-02-27 CN claimed
CN-101110237-A Optical information storage medium PRODISC TECHNOLOGY INC (CN) 2008-01-23 CN claimed
CN-1299330-C Sulfide semiconductor mask for photoetching SHANGHAI INST OPTICS & FINE ME (CN) 2007-02-07 CN claimed
CN-1273975-C Super-resolution near-field structure optical disk SHANGHAI INST OPTICS & FINE ME (CN) 2006-09-06 CN claimed
CN-1270310-C Super-resolution structure containing nonlinear mask layer SHANGHAI INST OF OPTICS AND & (CN) 2006-08-16 CN claimed
CN-1768379-A Recording medium and reproducting method and equipment with super-resolution near-field structure SAMSUNG ELECTRONICS CO LTD (KR) 2006-05-03 CN claimed
CN-1624873-A Sulfide semiconductor mask for photoetching SHANGHAI INST OPTICS & FINE ME (CN) 2005-06-08 CN claimed
CN-1588543-A Super-resolution near-field structure optical disk SHANGHAI INST OPTICS & FINE ME (CN) 2005-03-02 CN claimed
CN-1564252-A Super-resolution structure containing nonlinear mask layer SHANGHAI INST OPTICS & FINE ME (CN) 2005-01-12 CN claimed