SCHEMBL3408277

SCHEMBL3408277

CCCCCCCC(I)S(=O)(=O)O

nearest known ligand 0.50

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.50
GPR84 Q9NQS5 7/20 0.42
FDPS P14324 3/20 0.42
FFAR1 O14842 1/20 0.42
LMNA P02545 1/20 0.41
MAPT P10636 1/20 0.41
LCK P06239 1/20 0.41
PPARD Q03181 1/20 0.41
ZDHHC20 Q5W0Z9 1/20 0.41
ZDHHC2 Q9UIJ5 1/20 0.41
CA2 P00918 3/20 0.39
CA1 P00915 2/20 0.39
LAP3 P28838 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19811916 0.83 FAAH (0.41) TP53GPR84MAPTZDHHC20ZDHHC2
SCHEMBL1001330 0.81
SCHEMBL9377927 0.80 TP53 (0.52) TP53GPR84FDPSFFAR1LMNA
SCHEMBL27374159 0.80 TP53 (0.52) TP53GPR84FDPSFFAR1LMNA
SCHEMBL20420702 0.77 TP53 (0.54) TP53GPR84FDPSFFAR1LMNA
SCHEMBL7765505 0.77 TP53 (0.54) TP53GPR84FDPSFFAR1LMNA
SCHEMBL7785566 0.77 TP53 (0.54) TP53GPR84FDPSFFAR1LMNA
SCHEMBL9460109 0.77 TP53 (0.54) TP53GPR84FDPSFFAR1LMNA
SCHEMBL10695349 0.77 TP53 (0.54) TP53GPR84FDPSFFAR1LMNA
SCHEMBL6241631 0.77 TP53 (0.54) TP53GPR84FDPSFFAR1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102124064-B Composition for forming silicon-containing resist underlayer film with onium group NISSAN CHEMICAL IND LTD 2014-09-03 CN disclosed
CN-101946209-B Silicon-containing resist underlayer film-forming composition containing cyclic amino group NISSAN CHEMICAL IND LTD 2014-01-22 CN disclosed
CN-101910949-B Composition for forming resist underlayer film containing silicon and having urea group NISSAN CHEMICAL IND LTD 2013-07-24 CN disclosed
CN-101878451-B Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat NISSAN CHEMICAL IND LTD 2013-04-24 CN disclosed
CN-101558358-B Resist underlayer film forming composition containing low molecular weight dissolution promoter NISSAN CHEMICAL IND LTD 2012-06-27 CN disclosed
CN-102124064-A Composition for forming silicon-containing resist underlayer film with onium group NISSAN CHEMICAL IND LTD 2011-07-13 CN disclosed
CN-101946209-A Silicon-containing resist underlayer film-forming composition containing cyclic amino group NISSAN CHEMICAL IND LTD 2011-01-12 CN disclosed
CN-101910949-A Composition for forming resist underlayer film containing silicon and having urea group NISSAN CHEMICAL IND LTD 2010-12-08 CN disclosed
EP-2126074-B1 USE OF ACETALS FOR THE ISOLATION OF NUCLEIC ACIDS ROCHE DIAGNOSTICS GMBH (DE) 2010-12-01 EP disclosed
CN-101878451-A Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat NISSAN CHEMICAL IND LTD 2010-11-03 CN disclosed
CN-101558358-A Resist underlayer film forming composition containing low molecular weight dissolution promoter NISSAN CHEMICAL IND LTD (JP) 2009-10-14 CN disclosed
CN-101523291-A Method for manufacturing semiconductor device using resist underlayer film formed by photo-crosslinking curing NISSAN CHEMICAL IND LTD (JP) 2009-09-02 CN disclosed
EP-0328102-B1 NOVEL POLYVINYL ALCOHOL AND PROCESS FOR PRODUCING POLYVINYL ALCOHOL BY HYDROLYSIS CATALYSED BY ACIDS Kuraray Co., Ltd. (JP) 1993-05-12 EP disclosed
US-5047469-A Novel polyvinyl alcohol and process for producing polyvinyl alcohol by hydrolysis catalyzed by acids KURARAY CO., LTD. (JP) 1991-09-10 US disclosed
EP-0328102-A2 Novel polyvinyl alcohol and process for producing polyvinyl alcohol by hydrolysis catalysed by acids Kuraray Co., Ltd. (JP) 1989-08-16 EP disclosed
US-4456485-A PRECIPITATION IN PRESENCE OF AMINE, PHOSPHORIC OR SULFONIC ACID ESTER, ETHYLENE OXIDE ADDUCTS, OR POLYPROPYLENE GLYCOL OR COPOLYMERS THEREOF BASF WYANDOTTE CORPORATION (US) 1984-06-26 US disclosed
US-4421516-A Process for preparing discharge resist prints on hydrophobic textile materials CASSELLA AKTIENGESELLSCHAFT (DE) 1983-12-20 US disclosed