Phosphoric Acid

Phosphoric Acid

SCHEMBL3410708

O=P([O-])([O-])[O-].O=P([O-])([O-])[O-].[AsH3].[Ga+3].[In+3]

nearest known ligand 0.39

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Known targets — ChEMBL curated mechanism

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

The experimentally established mechanism targets of Phosphoric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
SLC34A1 Q06495 1/20 0.39
LMNA P02545 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphoric Acid SCHEMBL1449220 0.94 SLC34A1 (0.42) SLC34A1LMNA
Phosphoric Acid SCHEMBL887643 0.94
Phosphoric Acid SCHEMBL3410711 0.89 SLC34A1 (0.39) SLC34A1LMNA
Phosphoric Acid SCHEMBL1443633 0.89
Phosphoric Acid SCHEMBL841834 0.89 SLC34A1 (0.39) SLC34A1LMNA
Phosphoric Acid SCHEMBL36576 0.88
Phosphoric Acid SCHEMBL141772 0.88
Phosphoric Acid SCHEMBL31096394 0.88 SLC34A1 (0.46) SLC34A1LMNA
Phosphoric Acid SCHEMBL29436881 0.88 SLC34A1 (0.46) SLC34A1LMNA
Phosphoric Acid SCHEMBL887644 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9082909-B2 Optical device including three coupled quantum well structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-07-14 US claimed
US-20140191196-A1 OPTICAL DEVICE INCLUDING THREE COUPLED QUANTUM WELL STRUCTURE GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2014-07-10 US claimed
US-8592247-B2 Method of fabricating avalanche photodiode ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2013-11-26 US claimed
US-20120156826-A1 METHOD OF FABRICATING AVALANCHE PHOTODIODE ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2012-06-21 US claimed
CN-119894126-A InGaAsP Geiger avalanche diode and preparation method thereof 西南技术物理研究所 2025-04-25 CN disclosed
WO-2024130727-A1 LASER, OPTICAL MODULE, AND APPARATUS 华为技术有限公司 2024-06-27 WO disclosed
US-9082909-B2 Optical device including three coupled quantum well structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-07-14 US disclosed
US-8929415-B2 Photonic crystal cavities and related devices and methods CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 2015-01-06 US disclosed
US-20140301418-A1 PHOTONIC CRYSTAL CAVITIES AND RELATED DEVICES AND METHODS CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 2014-10-09 US disclosed
US-20140191196-A1 OPTICAL DEVICE INCLUDING THREE COUPLED QUANTUM WELL STRUCTURE GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2014-07-10 US disclosed
US-8670471-B2 Photonic crystal cavities and related devices and methods CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 2014-03-11 US disclosed
US-8592247-B2 Method of fabricating avalanche photodiode ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2013-11-26 US disclosed
US-20120156826-A1 METHOD OF FABRICATING AVALANCHE PHOTODIODE ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2012-06-21 US disclosed
US-20100288341-A1 PHOTONIC CRYSTAL CAVITIES AND RELATED DEVICES AND METHODS CALIFORNIA INSTITUTE OF TECHNOLOGY 2010-11-18 US disclosed
CN-1909309-B Integration method for electric absorption modulation laser and modular spot converter INST SEMICONDUCTORS CAS 2010-04-14 CN disclosed
CN-1909309-A Integration method for electric absorption modulation laser and modular spot converter INST OF SEMICONDUCTORS CAS (CN) 2007-02-07 CN disclosed
CN-1909310-A Method for making modular spot converting distributed-feedback Prague laser by using quantum trap confounding INST OF SEMICONDUCTORS CAS (CN) 2007-02-07 CN disclosed
US-7173758-B2 Gain-clamped semiconductor optical amplifier SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-02-06 US disclosed
US-20050185263-A1 Gain-clamped semiconductor optical amplifier SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-08-25 US disclosed