SCHEMBL3412014

SCHEMBL3412014

CC1(F)C(C)(F)C(F)(F)C(F)(F)C1(F)F

nearest known ligand 0.39

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
TDP1 Q9NUW8 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1336247 1.00 MEN1 (0.39) MEN1KMT2ATDP1
SCHEMBL24732508 1.00 MEN1 (0.39) MEN1KMT2ATDP1
SCHEMBL14279967 0.95 MEN1 (0.31) MEN1KMT2ATDP1
SCHEMBL14279972 0.95 MEN1 (0.31) MEN1KMT2ATDP1
SCHEMBL33635 0.95 MEN1 (0.31) MEN1KMT2ATDP1
SCHEMBL3217838 0.90
SCHEMBL3458732 0.90 MEN1 (0.39) MEN1KMT2ATDP1
SCHEMBL112086 0.90 MEN1 (0.39) MEN1KMT2ATDP1
SCHEMBL1608601 0.90 MEN1 (0.39) MEN1KMT2ATDP1
SCHEMBL9907096 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-8900791-B2 Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern with the composition FUJIFILM CORPORATION (JP) 2014-12-02 US disclosed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-8268528-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-18 US disclosed
US-8158330-B2 Resist protective coating composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-17 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8039200-B2 Photosensitive composition and pattern-forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2011-10-18 US disclosed
US-20110171577-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN WITH THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-14 US disclosed
US-7923199-B2 Using a sulfonium acid generator that forms a fluorine-substituted sulfonic acid compound; improved in the exposure latitude, pitch dependency and line edge roughness and enhanced in the sensitivity and resolution at the exposure with EUV light FUJIFILM CORPORATION (JP) 2011-04-12 US disclosed
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 US disclosed
US-20100266957-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-10-21 US disclosed
US-20100136482-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-20090286182-A1 RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090280434-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-12 US disclosed
US-7569323-B2 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7541131-B2 Resist composition, compound for use in the resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-06-02 US disclosed
US-7510822-B2 Stimulation sensitive composition and compound FUJIFILM CORPORATION (JP) 2009-03-31 US disclosed
US-7455952-B2 Patterning process and resist overcoat material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-25 US disclosed
US-7442815-B2 Homo- or copolymerizing 2,2,3,3,4,5-hexafluoro-2,3-dihydrofuran derivative or fluorinated 1,2-didehydrooxetane, or dihydropyran derivative; transmittance and durability against short wavelength light; photolithography using KrF excimer lasers; clarity, radiation transparent ASAHI GLASS COMPANY, LIMITED (JP) 2008-10-28 US disclosed
US-7202014-B2 Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition FUJIFILM CORPORATION (JP) 2007-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110171577-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN WITH THE COMPOSITION ARSA, RAD51, ARID2 MEN1 2393/4885KMT2A 2772/4885TDP1 3244/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.