SCHEMBL3414702

SCHEMBL3414702

CC1CC2CC1CC2O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10198635 1.00
SCHEMBL3456333 1.00
SCHEMBL1604317 0.80
SCHEMBL14441066 0.80
SCHEMBL820453 0.80
SCHEMBL331684 0.80
SCHEMBL21098299 0.80 CYP2C9 (0.33)
SCHEMBL16281053 0.80 CA1 (0.38)
Ammonia Solution, Strong SCHEMBL29178203 0.77
SCHEMBL15694242 0.74 FUCA1 (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11009790-B2 Photoacid generator and photoresist composition including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-05-18 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
WO-2016193188-A1 METHOD FOR PRODUCING ORGANOSILICON COMPOUNDS HAVING AMINO ACID GROUPS WACKER CHEMIE AG (DE) 2016-12-08 WO disclosed
US-20160096978-A1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-20160096977-A1 COMPOSITION FOR FORMING A COATING TYPE SILICON-CONTAINING FILM, SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US disclosed
EP-1720064-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2006-11-08 EP disclosed
US-20060223001-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-05 US disclosed
EP-1679314-A1 SILANE COMPOUND, POLYSILOXANE AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-07-12 EP disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
US-6908722-B2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-06-21 US disclosed
US-20040067436-A1 Polymerizable silicon-containing compound, manufacturing method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-04-08 US disclosed
WO-2003082350-A2 RADIOLABELLED QUINOLINE AND QUINOLINONE DERIVATIVES AND THEIR USE AS METABOTROPIC GLUTAMATE RECEPTOR LIGANDS JANSSEN PHARMACEUTICA N.V. (BE) 2003-10-09 WO disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed
EP-1270553-A2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR Corporation (JP) 2003-01-02 EP disclosed
US-4524223-A CHROMATOGRAPHIC SEPARATION OF DIASTEREOMERIC ESTERS UOP INC. (US) 1985-06-18 US disclosed