SCHEMBL3418287

SCHEMBL3418287

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nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7884530 0.82
SCHEMBL7716514 0.82
SCHEMBL19181781 0.82
SCHEMBL21328561 0.82
Water SCHEMBL21808767 0.82
SCHEMBL3862326 0.82
SCHEMBL7651230 0.82
SCHEMBL7884531 0.82
SCHEMBL1189329 0.82
SCHEMBL30899520 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 107 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250301915-A1 MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-09-25 US claimed
US-12349600-B2 Magnetic tunnel junction (MTJ) element and its fabrication process TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) 2025-07-01 US claimed
US-20240365676-A1 MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2024-10-31 US claimed
US-20240233762-A1 Magnetic Read Sensors Having Reduced Signal Imbalance WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2024-07-11 US claimed
CN-118298860-A Magnetic read sensor with reduced signal imbalance 西部数据技术公司 2024-07-05 CN claimed
CN-110880343-B Magnetic memory device 铠侠股份有限公司 2023-11-10 CN claimed
US-11716909-B2 Magnetic tunnel junction (MTJ) element and its fabrication process TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) 2023-08-01 US claimed
US-20220115586-A1 MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) 2022-04-14 US claimed
US-11133456-B2 Magnetic storage device TOSHIBA MEMORY CORPORATION (JP) 2021-09-28 US claimed
CN-109427962-B Magnetic junction, method of providing the same, and magnetic memory 三星电子株式会社 2021-09-03 CN claimed
CN-110880343-A Magnetic memory device 东芝存储器株式会社 2020-03-13 CN claimed
US-20200083432-A1 MAGNETIC STORAGE DEVICE TOSHIBA MEMORY CORPORATION (JP) 2020-03-12 US claimed
EP-3563432-A1 PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM INTEL Corporation (US) 2019-11-06 EP claimed
US-20190280188-A1 PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM INTEL CORPORATION 2019-09-12 US claimed
CN-110192288-A PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM 英特尔公司 2019-08-30 CN claimed
CN-109427962-A The method and magnetic storage of magnetic junction and the offer magnetic junction 三星电子株式会社 2019-03-05 CN claimed
US-12597437-B2 Rear soft bias dual free layer sensor with patterned decoupling layer WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2026-04-07 US disclosed
US-20250391430-A1 Dual Free Layer TMR Reader with Shaped Rear Bias and Methods of Forming Thereof WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2025-12-25 US disclosed
US-4615748-A COBALT, HAFNIUM, PALLADIUM ALLOY; FLUX DENSITY HIGH SATURATION AND LOW SATURATION MAGNETOSTRICTION CONSTANT SONY CORPORATION (JP) 1986-10-07 US disclosed
EP-0178634-A2 Amorphous soft magnetic thin film SONY CORPORATION (JP) 1986-04-23 EP disclosed